The change in characteristics of few-layer MoS2 FET by annealing in H2 atmosphere

Presentation information

Oral presentation

17. Nanocarbon Technology » 17.4 Device application

Mon. Sep 16, 2013 3:45 PM - 6:30 PM B1 (TC2 1F-101)

4:00 PM - 4:15 PM

^○masaya murase¹, yuusuke matsui¹, hiroshi tabata¹, osamu kubo¹, mitsuhiro katayama¹ (Osaka Univ.¹)

Keywords:MoS2