[16p-B1-1~11] 17.4 Device application

△ [16p-B1-3] Transition Metal Dichalcogenides based Electric Double Layer Transistors

^○Kou Ho¹, Jing-Kai Huang², Ryo Shimizu¹, Kazuma Funahashi¹, Lain-Jong Li², Yoshihiro Iwasa³, Taishi Takenobu¹ (Waseda Univ.¹, Academia Sinica², Univ. of Tokyo³)

Keywords:電界効果トランジスタ,二硫化モリブデン,遷移金属ダイカルコゲナイド