[16p-B2-1~14] 15.8 Crystal evaluation, nanoimpurities and crystal defects

[16p-B2-2] Generation of vacancies on growth interface and of interstitials inside crystal during silicon melt growth [2] by gradually degreasing pulling rate

^○Takao Abe¹, Toru Takahashi¹, Koun Shirai² (Shin-Etsu Handotai¹, Osaka Univ.²)

Keywords:点欠陥