[16p-P7-1~52] 17 Nanocarbon Technology(poster)

[16p-P7-9] Low-temperature Formation of Epitaxial Graphene On Silicon Substrate Using Ni silicidation

^○Mika Hasegawa¹, Kenta Sugawara¹, Shota Sambonsuge¹, Naoki Haramoto¹, Ryota Suto¹, Hirokazu Fukidome¹, Hiroyuki Nagasawa¹, Maki Suemitsu¹ (RIEC,Tohoku Univ.¹)

Keywords:グラフェン,エピタキシャル成長,シリサイド