[17a-B3-1~11] 15.6 IV-group-based compounds

△ [17a-B3-11] The XPS Study on Depth Profile of N atom in Oxynitride film formed on 4H-SiC by Radical Nitridation

^○(M2)Hazuki Okada¹, Akito Takashima², Takayuki Muro², Hiroshi Nohira¹ (Tokyo City Univ.¹, JASRI²)

Keywords:SiC,X線光電子分光　,窒化処理