Activation of Alminium in 4H-SiC by Atmospheric Pressure Thermal Plasma Jet Irradiation

Presentation information

Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

Tue. Sep 17, 2013 9:00 AM - 12:00 PM B3 (TC2 1F-105)

9:30 AM - 9:45 AM

^○(M1)Keisuke Maruyama¹, Hiroaki Hanafusa¹, Hideki Murakami¹, Shohei Hayashi¹, Seiichiro Higashi¹ (Hiroshima Univ.¹)

Keywords:熱プラズマジェット,SiC