Fabrication and Characterization of 3.3 kV SiC-SBD with the VLD Edge Termination

Kohei Ebihara

Presentation information

Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

[17a-B3-1~11] 15.6 IV-group-based compounds

Tue. Sep 17, 2013 9:00 AM - 12:00 PM B3 (TC2 1F-105)

9:45 AM - 10:00 AM

△ [17a-B3-4] Fabrication and Characterization of 3.3 kV SiC-SBD with the VLD Edge Termination

^○Kohei Ebihara¹, Yasuki Yamamoto¹, Yoshiyuki Nakaki¹, Sunao Aya¹, Masayuki Imaizumi¹, Naruhisa Miura¹, Shuhei Nakata¹, Satoshi Yamakawa¹ (Mitsubishi Electric¹)

Keywords:SiC,SBD,終端構造

« Previous in this session
Next in this session »

▲