Interfacial Properties near Conduction Band Edge in SiO<sub>2</sub>/SiC MOS structures

Presentation information

Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

Tue. Sep 17, 2013 9:00 AM - 12:00 PM B3 (TC2 1F-105)

10:45 AM - 11:00 AM

^○Noriyuki Taoka¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya Univ.¹)

Keywords:SiC,interface trap