Diffusivity of Mobile Ions Inherent to Thermal SiO<sub>2</sub>/SiC Structures in Deposited SiO<sub>2</sub> Gate Dielectrics

Presentation information

Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

Tue. Sep 17, 2013 9:00 AM - 12:00 PM B3 (TC2 1F-105)

11:00 AM - 11:15 AM

^○(D)Atthawut Chanthaphan¹, Yuki Nakano², Takashi Nakamura², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka Univ.¹, ROHM CO., LTD.²)

Keywords:mobile ion,BTI,MOS