[17a-B3-1~11] 15.6 IV-group-based compounds

[17a-B3-9] Theoretical Studies on Oxidation Rate of 4H-SiC -Origin of Difference in Oxidation Rate between Si-surface and C-surface-

^○(BC)Shotaro Maruyama¹, Kentaro Endo¹, Kenta Chokawa¹, Katsumasa Kamiya¹, Kenji Shiraishi^1,2 (Univ. of Tsukuba¹, Nagoya Univ.²)

Keywords:第一原理計算,酸化,炭化硅素