The 74th JSAP Autumn Meeting,2013

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Oral presentation

13. Semiconductors A (Silicon) » 13.3 Insulator technology

[17a-B5-1~10] 13.3 Insulator technology

Tue. Sep 17, 2013 9:15 AM - 12:00 PM B5 (TC2 2F-201)

9:15 AM - 9:30 AM

△ [17a-B5-1] Theoretical Analysis of SiO2 Etching Processes by Fluorocarbon Radicals Based on Quantum Chemical Molecular Dynamics Method

○(D)Hiroshi Ito1, Takuya Kuwahara1, Yuji Higuchi1, Nobuki Ozawa1, Seiji Samukawa2, Momoji Kubo1 (Graduate School of Engineering, Tohoku Univ.1, Inst. of Fluid Science, Tohoku Univ.2)

Keywords:エッチング,シリコン酸化膜,シミュレーション