The 74th JSAP Autumn Meeting,2013

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Oral presentation

13. Semiconductors A (Silicon) » 13.3 Insulator technology

[17a-B5-1~10] 13.3 Insulator technology

Tue. Sep 17, 2013 9:15 AM - 12:00 PM B5 (TC2 2F-201)

11:30 AM - 11:45 AM

[17a-B5-9] Impact of InAs insertion layer on Al2O3/GaSb MOS interface properties

○(PC)Masafumi Yokoyama1, Haruki Yokoyama2, Mitsuru Takenaka1, Shinichi Takagi1 (The Univ. of Tokyo1, NTT Photonics Lab. NTT Corp.2)

Keywords:GaSb,MOS界面,Al2O3