[17p-B3-1~17] 15.6 IV-group-based compounds

[17p-B3-2] Discussion for Mechanism of Single Event Gate Rupture in SiC-MOS Capacitors

^○(DC)Manato Deki^1,2, Takahiro Makino², Takuro Tomita¹, Kazutoshi Kojima³, Takeshi Ohshima² (Tokushima Univ.¹, JAEA², AIST³)

Keywords:炭化ケイ素