Oral presentation

[17a-B3-1~11] 15.6 IV-group-based compounds

Tue. Sep 17, 2013 9:00 AM - 12:00 PM B3 (TC2 1F-105)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:00 AM - 9:15 AM

[17a-B3-1] SiC dry-etching using F₂+He gas plasma

^○Takaya Tanaka¹, Satoko Shinkai², Haruna Oda³, Shinich Motoyama³ (Kyushu Inst. of Tech.¹, CMS, Kyushu Inst. of Tech.², SAMCO Inc.³)

9:15 AM - 9:30 AM

[17a-B3-2] Electrical characteristics of directly bonded interface between Si and SiC

^○Yukihiro Sasada¹, Takamasa Kurumi¹, Ryosuke Araki¹, Hideo Shimizu¹, Hiroyuki Kinoshita¹, Masahiro Yoshimoto¹ (Department of Electronics, Kyoto Inst. of Tech.¹)

9:30 AM - 9:45 AM

[17a-B3-3] Activation of Alminium in 4H-SiC by Atmospheric Pressure Thermal Plasma Jet Irradiation

^○(M1)Keisuke Maruyama¹, Hiroaki Hanafusa¹, Hideki Murakami¹, Shohei Hayashi¹, Seiichiro Higashi¹ (Hiroshima Univ.¹)

9:45 AM - 10:00 AM

△ [17a-B3-4] Fabrication and Characterization of 3.3 kV SiC-SBD with the VLD Edge Termination

^○Kohei Ebihara¹, Yasuki Yamamoto¹, Yoshiyuki Nakaki¹, Sunao Aya¹, Masayuki Imaizumi¹, Naruhisa Miura¹, Shuhei Nakata¹, Satoshi Yamakawa¹ (Mitsubishi Electric¹)

10:00 AM - 10:15 AM

△ [17a-B3-5] Effects of crystal face and oxidation atmosphere on thermal oxide structure near the 4H-SiC interface

^○Hirohisa Hirai¹, Koji Kita^1,2 (Univ. of Tokyo¹, JST-PRESTO²)

Break （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

[17a-B3-6] Analysis of linear oxide growth on 4H-SiC in thin film (<10 nm) region

^○Richard Heihatiro Kikuchi¹, Koji Kita^1,2 (Univ. of Tokyo¹, JST-PRESTO²)

10:45 AM - 11:00 AM

[17a-B3-7] Interfacial Properties near Conduction Band Edge in SiO₂/SiC MOS structures

^○Noriyuki Taoka¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya Univ.¹)

11:00 AM - 11:15 AM

▼ [17a-B3-8] Diffusivity of Mobile Ions Inherent to Thermal SiO₂/SiC Structures in Deposited SiO₂ Gate Dielectrics

^○(D)Atthawut Chanthaphan¹, Yuki Nakano², Takashi Nakamura², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka Univ.¹, ROHM CO., LTD.²)

11:15 AM - 11:30 AM

[17a-B3-9] Theoretical Studies on Oxidation Rate of 4H-SiC -Origin of Difference in Oxidation Rate between Si-surface and C-surface-

^○(BC)Shotaro Maruyama¹, Kentaro Endo¹, Kenta Chokawa¹, Katsumasa Kamiya¹, Kenji Shiraishi^1,2 (Univ. of Tsukuba¹, Nagoya Univ.²)

11:30 AM - 11:45 AM

[17a-B3-10] Theoretical Studies on NO Initial Oxidation Process of 4H-SiC Surfaces

^○Kentaro Endo¹, Syotaro Maruyama¹, Shigenori Kato¹, Katsumasa Kamiya¹, Kenji Shiraishi^1,2 (Univ. of Tsukuba¹, Nagoya Univ²)

11:45 AM - 12:00 PM

△ [17a-B3-11] The XPS Study on Depth Profile of N atom in Oxynitride film formed on 4H-SiC by Radical Nitridation

^○(M2)Hazuki Okada¹, Akito Takashima², Takayuki Muro², Hiroshi Nohira¹ (Tokyo City Univ.¹, JASRI²)

Oral presentation

[17p-B3-1~17] 15.6 IV-group-based compounds

Tue. Sep 17, 2013 1:30 PM - 6:00 PM B3 (TC2 1F-105)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

Lunch （12:00 PM - 1:30 PM）

1:30 PM - 1:45 PM

[17p-B3-1] [JSAP Young Scientist Award Speech](15 min.) Dislocation Revelation from (0001) Carbon-face of 4H-SiC by Using Vaporized KOH at High Temperature

^○Yong-Zhao Yao¹ (JFCC¹)

1:45 PM - 2:00 PM

[17p-B3-2] Discussion for Mechanism of Single Event Gate Rupture in SiC-MOS Capacitors

^○(DC)Manato Deki^1,2, Takahiro Makino², Takuro Tomita¹, Kazutoshi Kojima³, Takeshi Ohshima² (Tokushima Univ.¹, JAEA², AIST³)

2:00 PM - 2:15 PM

[17p-B3-3] Development of a FCA measurement system for evaluation of carrier lifetime in SiC

^○Yuto Mori¹, Truyen Nhuyen¹, Masashi Kato¹, Masaya Ichimura¹ (Nagoya Inst. of Tech.¹)

2:15 PM - 2:30 PM

[17p-B3-4] Aluminum Doping of 4H-SiC by wet-chemical Laser Irradiation with KrF Excimer Laer

^○Daichi Marui¹, Akihiro Ikeda¹, Koji Nishi¹, Hiroshi Ikenoue¹, Tanemasa Asano¹ (Kyushu Univ.¹)

2:30 PM - 2:45 PM

△ [17p-B3-5] Development of Real-Time Gamma-Ray Dose Rate Dosimeter with 4H-SiC

^○(PC)Natsuko Fujita¹, Naoya Iwamoto¹, Shinobu Onoda¹, Takahiro Makino¹, Takeshi Ohshima¹ (JAEA¹)

2:45 PM - 3:00 PM

△ [17p-B3-6] Defects in HPSI 4H-SiC studied by alpha particles induced charge transient spectroscopy

^○(PC)Naoya Iwamoto¹, Natsuko Fujita¹, Takahiro Makino¹, Shinobu Onoda¹, Takeshi Ohshima¹ (JAEA¹)

3:00 PM - 3:15 PM

[17p-B3-7] Identification of defect structures forming the deep levels in 4H-SiC using electron irradiation technique

^○Masashi Kato¹, Hiroki Nakane¹, Masaya Ichimura¹, takeshi Ohshima² (Nagoya Institute of Technology¹, Japan Atomic Energy Agency²)

3:15 PM - 3:30 PM

[17p-B3-8] Room Temperature Process for Producing Silicon Carbide Thin Film on Metal Surface

Masaki Tsuji¹, Azumi Hirooka¹, ^○Hitoshi Habuka¹ (Yokohama Nat. Univ.¹)

Break （3:30 PM - 3:45 PM）

3:45 PM - 4:00 PM

[17p-B3-9] Off-Orientation Influence on C-face (0001) 4H-SiC Surface Morphology Produced by Etching using

Yusuke Fukumoto¹, ^○Hitoshi Habuka¹, Tomohisa Kato² (Yokohama Nat. Univ.¹, AIST²)

4:00 PM - 4:15 PM

[17p-B3-10] SiC Epitaxial Reactor Cleaning Method Using Chlorine Trifluoride Gas

Yusuke Fukumoto¹, ^○Kosuke Mizuno¹, Hitoshi Habuka¹, Yuki Ishida², Toshiyuki Ohno² (Yokohama Nat. Univ.¹, FUPET²)

4:15 PM - 4:30 PM

[17p-B3-11] Production Method of ClF3 Resistant Film

^○Hitomi Matsuda¹, Hitoshi Habuka¹, Yuki Ishida², Toshiyuki Ohno² (Yokohama Nat. Univ.¹, FUPET²)

4:30 PM - 4:45 PM

[17p-B3-12] Development of Silicon Carbide Etching Reactor Using Chlorine Trifluoride Gas (2)

^○Dairi Yajima¹, Hitoshi Habuka¹, Tomohisa Kato² (Yokohama Nat. Univ.¹, AIST²)

4:45 PM - 5:00 PM

[17p-B3-13] The debunching mechanism of macro-step bunching on 4H-SiC(0001) surface

^○(M1)Hideki Shimizu¹, Yasunori Kutsuma¹, Kouji Ashida¹, Noboru Ohtani¹, Tadaaki Kaneko¹ (Kwansei Gakuin Univ.¹)

5:00 PM - 5:15 PM

△ [17p-B3-14] Breakdown Characteristics in Surface-Activated Bonding Based Si/SiC Junctions

^○(M1)Shota Nishida¹, Jianbo Liang¹, Masasi Morimoto¹, Naoteru Shigekawa¹, Manabu Arai² (Osaka City Univ.¹, New Japan Radio Co., Ltd.²)

5:15 PM - 5:30 PM

△ [17p-B3-15] Conversion from basal plane dislocations to threading edge dislocations in growth of epitaxial layers on 4H-SiC substrates with vicinal off-angle

^○Keiko Masumoto^1,2, Sachiko Ito^1,2, Hideto Goto², Kentaro Tamura^1,3, Chiaki Kudou^1,4, Johji Nishio^1,5, Kazutoshi Kojima^1,2, Toshiyuki Ohno^1,6, Hajime Okumura^1,2 (FUPET¹, AIST², ROHM³, Panasonic⁴, Toshiba⁵, Hitachi⁶)

5:30 PM - 5:45 PM

△ [17p-B3-16] 3C-SiC Film Growth on Si Substrates by Pulsed Laser Deposition

^○Tsugitada Narita¹, Kazuki Meguro¹, Daiki Suzuki¹, Yohei Yamamoto¹, Kaonn Noto¹, Hideki Nakazawa¹ (Hirosaki Univ.¹)

5:45 PM - 6:00 PM

[17p-B3-17] Cross-sectional TEM Observation of Epitaxial Graphene formed on Rotated-Epi-Film of 3C-SiC(111) on Si(110) Substrates

^○(M2)Shota Sambonsuge¹, Hirouiki Nagasawa¹, Sergey Filimonov², Shun Ito³, Hirokazu Fukidome¹, Maki Suemitsu^1,4 (RIEC, Tohoku Univ.¹, Dept. of Physics, Tomsk State Univ.², IMR, Tohoku Univ.³, JST/CREST⁴)

Oral presentation

[18a-B3-1~9] 15.6 IV-group-based compounds

Wed. Sep 18, 2013 9:00 AM - 11:30 AM B3 (TC2 1F-105)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:00 AM - 9:15 AM

[18a-B3-1] The suppression of the trenches by the control of solution flow above growth surface in the solution growth of SiC

^○Can Zhu¹, Shunta Harada¹, Kazuaki Seki¹, Shiyu Xiao¹, Miho Tagawa¹, Yuji Matsumoto², Tomohisa Kato^3,4, Kazuhisa Kurashige^4,5, Hajime Okumura^3,4, Toru Ujihara¹ (Nagoya Univ.¹, Tohoku Univ.², AIST³, FUPET⁴, Hitachi Chemical⁵)

9:15 AM - 9:30 AM

[18a-B3-2] Threading dislocation conversion and step structure during SiC solution growth

^○Shunta Harada¹, Yuji Yamamoto¹, Shiyu Xiao¹, Atsushi Horio¹, Miho Tagawa¹, Toru Ujihara¹ (Nagoya Univ.¹)

9:30 AM - 9:45 AM

▼ [18a-B3-3] Investigation of basal plane dislocations generated during solution growth of silicon carbide

^○Shiyu Xiao¹, Can Zhu¹, Shunta Harada¹, Toru Ujihara¹ (Nagoya Univ.¹)

9:45 AM - 10:00 AM

△ [18a-B3-4] Effects of an Al additive in Si-Ni flux on the flux growth of SiC

^○Aomi Onuma¹, Shingo Maruyama¹, Shunta Harada², Toru Ujihara², Tomohisa Kato^3,4, Kazuhisa Kurashige^4,5, Hajime Okumura^3,4, Yuji Matsumoto^1,6 (MSL, Tokyo Tech¹, Nagoya Univ.², AIST³, FUPET⁴, Hitachi Chemical⁵, Tohoku Univ.⁶)

10:00 AM - 10:15 AM

[18a-B3-5] Raman investigation for subsurface damage induced by scratching test using diamond and SiC scratchers

Takeshi Mitani^1,2, ^○Masaru Tomobe², Shin-ichi Nakashima², Tomohisa Kato^1,2, Hajime Okumura^1,2 (FUPET¹, AIST²)

Break （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

[18a-B3-6] [Young Scientist Oral Presentation Award Speech](15 min.) Real-time Observation of Solution Growth Interface of SiC at High Temperature Using Visible Light Transmission Observation

^○Sakiko Kawanishi¹, Takeshi Yoshikawa¹, Kazuki Morita¹, Kazuhito Kamei², Kazuhiko Kusunoki², Hidemitsu Sakamoto³, Hiroshi Suzuki³ (The Univ. of Tokyo¹, Nippon Steel & Sumitomo Metal Corp.², Toyota Motor Corp.³)

10:45 AM - 11:00 AM

▲ [18a-B3-7] Dislocation density-based modeling of plastic deformation of 4H-SiC single crystals by the Alexander-Haasen model during PVT growth

^○Bing Gao¹, Shin-ichi Nishizawa², Koichi Kakimoto¹ (RIAM, Kyushu Univ.¹, AIST²)

11:00 AM - 11:15 AM

[18a-B3-8] Non destructive inspection of dislocations in SiC wafer by mirror projection electron microscopy

^○Toshiyuki Isshiki¹, Masaki Hasegawa² (Kyoto Inst. Tech.¹, Hitachi, Cent. Res. Lab.²)

11:15 AM - 11:30 AM

[18a-B3-9] 3C-SiC(1-10) and 4H-SiC(11-20) surface electronic states and their stability

^○(PC)Hiroshi Koyama^1,2, Jun Nara^1,2, Takahisa Ohno^1,2,3 (NIMS¹, MARCEED², IIS U.Tokyo³)

Poster presentation

[19a-P9-1~10] 15.6 IV-group-based compounds

Thu. Sep 19, 2013 9:30 AM - 11:30 AM P9 (Davis Memorial Auditorium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:30 AM - 11:30 AM

[19a-P9-1] Simulation studies on the generation mechanism of giant step bunching on 4H-SiC epitaxial layers

^○Yuuki Ishida¹, Sadafumi Yoshida¹ (AIST¹)

9:30 AM - 11:30 AM

▲ [19a-P9-2] Hall-effect measurement on the electrical properties of heavily Al-doped 4H-SiC thick epilayer

^○Shiyang Ji¹, Kazutoshi Kojima¹, Yuuki Ishida¹, Shingo Saito¹, Tomohisa Kato¹, Sadafumi Yoshida¹, Hidekazu Tsuchida², Hajime Okumura¹ (Natl. Inst of Adv. Ind. Sci. and Tech. (AIST)¹, Central Res. Inst. of Electric Power Indust. (CRIEPI)²)

9:30 AM - 11:30 AM

[19a-P9-3] Analysis of dielectric breakdown path in SiC MOS capacitors

^○Soshi Sato¹, Yuki Hiroi³, Kikuo Yamabe³, Makoto Kitabatake⁴, Tetsuo Endo^1,2, Masaaki Niwa¹ (CIES, Tohoku Univ.¹, School of Eng., Tohoku Univ.², Ins. Appl. Phys., Univ. Tsukuba³, FUPET⁴)

9:30 AM - 11:30 AM

[19a-P9-4] Real-time observation of the oxidation process of nonpolar hexagonal SiC surfaces

^○Daisuke Goto¹, Shuhei Yagi¹, Yasuto Hijikata¹, Hiroyuki Yaguchi¹ (Saitama Univ.¹)

9:30 AM - 11:30 AM

[19a-P9-5] Thermal etching properties of SiC using different halogen gases

^○Tomoaki Hatayama¹, Ryouta Hori¹, Hiroshi Yano¹, Takashi Fuyuki¹ (NAIST¹)

9:30 AM - 11:30 AM

[19a-P9-6] Electrically Detected Magnetic Resonance Study on Hydrogen depassivation from C-face Interface Defects in 4H-SiC(000-1) Metal-Oxide-Semiconductor Field Effect Transistors

^○(M1)Ryo Arai¹, Takahide Umeda¹, Yoshihiro Satoh¹, Mitsuo Okamoto², Shinsuke Harada², Ryoji Kosugi², Hajime Okumura², Takahiro Makino³, Takeshi Ohshima³ (Univ. of Tsukuba¹, National Institute of Advanced Industrial Science and Technology (AIST)², Japan Atomic Energy Agency (JAEA)³)

9:30 AM - 11:30 AM

[19a-P9-7] Oxidation Condition Dependence of Radiation Effects on 4H-SiC MOS Capacitors

^○Takahiro Makino¹, Manato Deki², Natsuko Fujita¹, Naoya Iwamoto¹, Shinobu Onoda¹, Takeshi Ohshima¹ (JAEA¹, Tokushima Univ.²)

9:30 AM - 11:30 AM

△ [19a-P9-8] Nitrogen Doping of 4H-SiC by Laser Irradiation in Ammonia Solution

^○(B)Yuki Inoue¹, Hiroshi Ikenoue¹, Akihiro Ikeda¹, Daisuke Nakamura¹, Tatsuo Okada¹, Tanemasa Asano¹ (Kyushu Univ.¹)

9:30 AM - 11:30 AM

[19a-P9-9] TLM Pattern Dependence of Low Ohmic Resistance Ni Silicide on n+ 4H-SiC by Partial Amorphousization

^○(M1)DESILVA MILANTHA¹, SHIN=ICHIRO KUROKI¹, TADASHI SATO¹, TAKAMARO KIKKAWA¹ (HIROSHIMA UNIVERSITY¹)

9:30 AM - 11:30 AM

[19a-P9-10] Optimization of implantation conditions on high-dose ion-implantation into 4 degrees off 4H-SiC epitaxial layer

^○Ken-ichi Yoshida¹, Sachi Niki¹, Hitoshi Kawanowa¹, Shinji Nagamachi¹ (Ion Technology Center¹)

Sessions

15. Crystal Engineering » 15.6 IV-group-based compounds

[17a-B3-1~11] 15.6 IV-group-based compounds

△ [17a-B3-4] Fabrication and Characterization of 3.3 kV SiC-SBD with the VLD Edge Termination

△ [17a-B3-5] Effects of crystal face and oxidation atmosphere on thermal oxide structure near the 4H-SiC interface

▼ [17a-B3-8] Diffusivity of Mobile Ions Inherent to Thermal SiO2/SiC Structures in Deposited SiO2 Gate Dielectrics

△ [17a-B3-11] The XPS Study on Depth Profile of N atom in Oxynitride film formed on 4H-SiC by Radical Nitridation

[17p-B3-1~17] 15.6 IV-group-based compounds

△ [17p-B3-5] Development of Real-Time Gamma-Ray Dose Rate Dosimeter with 4H-SiC

△ [17p-B3-6] Defects in HPSI 4H-SiC studied by alpha particles induced charge transient spectroscopy

△ [17p-B3-14] Breakdown Characteristics in Surface-Activated Bonding Based Si/SiC Junctions

△ [17p-B3-15] Conversion from basal plane dislocations to threading edge dislocations in growth of epitaxial layers on 4H-SiC substrates with vicinal off-angle

△ [17p-B3-16] 3C-SiC Film Growth on Si Substrates by Pulsed Laser Deposition

[18a-B3-1~9] 15.6 IV-group-based compounds

▼ [18a-B3-3] Investigation of basal plane dislocations generated during solution growth of silicon carbide

△ [18a-B3-4] Effects of an Al additive in Si-Ni flux on the flux growth of SiC

▲ [18a-B3-7] Dislocation density-based modeling of plastic deformation of 4H-SiC single crystals by the Alexander-Haasen model during PVT growth

[19a-P9-1~10] 15.6 IV-group-based compounds

▲ [19a-P9-2] Hall-effect measurement on the electrical properties of heavily Al-doped 4H-SiC thick epilayer

△ [19a-P9-8] Nitrogen Doping of 4H-SiC by Laser Irradiation in Ammonia Solution

▼ [17a-B3-8] Diffusivity of Mobile Ions Inherent to Thermal SiO₂/SiC Structures in Deposited SiO₂ Gate Dielectrics