Thermal etching properties of SiC using different halogen gases

Presentation information

Poster presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

Thu. Sep 19, 2013 9:30 AM - 11:30 AM P9 (Davis Memorial Auditorium)

9:30 AM - 11:30 AM

^○Tomoaki Hatayama¹, Ryouta Hori¹, Hiroshi Yano¹, Takashi Fuyuki¹ (NAIST¹)

Keywords:SiC,ハロゲン,エッチング