The 74th JSAP Autumn Meeting,2013

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Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

[17p-B3-1~17] 15.6 IV-group-based compounds

Tue. Sep 17, 2013 1:30 PM - 6:00 PM B3 (TC2 1F-105)

5:00 PM - 5:15 PM

△ [17p-B3-14] Breakdown Characteristics in Surface-Activated Bonding Based Si/SiC Junctions

○(M1)Shota Nishida1, Jianbo Liang1, Masasi Morimoto1, Naoteru Shigekawa1, Manabu Arai2 (Osaka City Univ.1, New Japan Radio Co., Ltd.2)

Keywords:表面活性化ボンディング法,SiC,ヘテロ接合