[17p-B3-1~17] 15.6 IV-group-based compounds

△ [17p-B3-15] Conversion from basal plane dislocations to threading edge dislocations in growth of epitaxial layers on 4H-SiC substrates with vicinal off-angle

^○Keiko Masumoto^1,2, Sachiko Ito^1,2, Hideto Goto², Kentaro Tamura^1,3, Chiaki Kudou^1,4, Johji Nishio^1,5, Kazutoshi Kojima^1,2, Toshiyuki Ohno^1,6, Hajime Okumura^1,2 (FUPET¹, AIST², ROHM³, Panasonic⁴, Toshiba⁵, Hitachi⁶)

Keywords:SiC,エピタキシャル,微傾斜