Dislocation density-based modeling of plastic deformation of 4H-SiC single crystals by the Alexander-Haasen model during PVT growth

Presentation information

Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

Wed. Sep 18, 2013 9:00 AM - 11:30 AM B3 (TC2 1F-105)

10:45 AM - 11:00 AM

^○Bing Gao¹, Shin-ichi Nishizawa², Koichi Kakimoto¹ (RIAM, Kyushu Univ.¹, AIST²)

Keywords:SiC