[18a-B3-1~9] 15.6 IV-group-based compounds

[18a-B3-1] The suppression of the trenches by the control of solution flow above growth surface in the solution growth of SiC

^○Can Zhu¹, Shunta Harada¹, Kazuaki Seki¹, Shiyu Xiao¹, Miho Tagawa¹, Yuji Matsumoto², Tomohisa Kato^3,4, Kazuhisa Kurashige^4,5, Hajime Okumura^3,4, Toru Ujihara¹ (Nagoya Univ.¹, Tohoku Univ.², AIST³, FUPET⁴, Hitachi Chemical⁵)

Keywords:トレンチ,SiC,solution flow