Investigation of basal plane dislocations generated during solution growth of silicon carbide

Presentation information

Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

Wed. Sep 18, 2013 9:00 AM - 11:30 AM B3 (TC2 1F-105)

9:30 AM - 9:45 AM

^○Shiyu Xiao¹, Can Zhu¹, Shunta Harada¹, Toru Ujihara¹ (Nagoya Univ.¹)

Keywords:basal plane dislocation,SiC,solution growth