Aluminum Doping of 4H-SiC by wet-chemical Laser Irradiation with KrF Excimer Laer

Presentation information

Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

Tue. Sep 17, 2013 1:30 PM - 6:00 PM B3 (TC2 1F-105)

2:15 PM - 2:30 PM

^○Daichi Marui¹, Akihiro Ikeda¹, Koji Nishi¹, Hiroshi Ikenoue¹, Tanemasa Asano¹ (Kyushu Univ.¹)

Keywords:ドーピング,SiC,エキシマレーザー