[17p-B3-1~17] 15.6 IV-group-based compounds

[17p-B3-7] Identification of defect structures forming the deep levels in 4H-SiC using electron irradiation technique

^○Masashi Kato¹, Hiroki Nakane¹, Masaya Ichimura¹, takeshi Ohshima² (Nagoya Institute of Technology¹, Japan Atomic Energy Agency²)

Keywords:深い準位,4H-SiC,PICTS