[17p-B5-1~21] 13.3 Insulator technology

▲ [17p-B5-10] [Young Scientist Oral Presentation Award Speech](15 min.) Oxygen Potential Lowering in N-doped GeO₂ for Ge MIS Gate Stack Design in Extremely Thin EOT Region

^○Toshiyuki Tabata^1,2, Choong Hyun Lee^1,2, Tomonori Nishimura^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (Univesity of Tokyo¹, JST-CREST²)

Keywords:Ge,High-k