Oral presentation

[17a-B5-1~10] 13.3 Insulator technology

Tue. Sep 17, 2013 9:15 AM - 12:00 PM B5 (TC2 2F-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:15 AM - 9:30 AM

△ [17a-B5-1] Theoretical Analysis of SiO₂ Etching Processes by Fluorocarbon Radicals Based on Quantum Chemical Molecular Dynamics Method

^○(D)Hiroshi Ito¹, Takuya Kuwahara¹, Yuji Higuchi¹, Nobuki Ozawa¹, Seiji Samukawa², Momoji Kubo¹ (Graduate School of Engineering, Tohoku Univ.¹, Inst. of Fluid Science, Tohoku Univ.²)

9:30 AM - 9:45 AM

[17a-B5-2] Low-Temperature Fabrication of gate oxide using a SOG solution

^○Ryo Usuda¹, Shinji Nozaki¹, Kazuo Uchida¹ (UEC Tokyo¹)

9:45 AM - 10:00 AM

△ [17a-B5-3] Forming SiO₂ thin Film by CO₂ laser Annealing of Spin-On Glass on Polycrystalline Silicon Thin Film

^○Daisuke Hishitani¹, Masahiro Horita^1,2, Yasuaki Ishikawa^1,2, Yosuke Watanabe³, Hiroshi Ikenoue³, Yukiharu Uraoka^1,2 (NAIST¹, CREST², Kyushu univ.³)

10:00 AM - 10:15 AM

▲ [17a-B5-4] Silicon Surface oxidation and Passivation by Remote Induction-Coupled Oxygen Plasma

Toshiyuki Sameshima¹, Masahiko Hasumi¹, Shinya Yoshidomi¹, Tomohiko Nakamura¹, ^○(B)Satoshi Shigeno¹ (TUAT¹)

10:15 AM - 10:30 AM

[17a-B5-5] Dependence of Oxide Hole Trap Density on Si Surface Orientation

^○(M2)Keisuke Umeda^1,3, Keitaro Okada^2,3, Daisuke Kobayashi³, Hiroshi Nohira¹, Kazuyuki Hirose³ (Tokyo City Univ.¹, Waseda Univ.², ISAS/JAXA³)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

▲ [17a-B5-6] Evaluation of Interface State Density of Strained-Si MOS Interfaces by Conductance Method

^○Weili Cai¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (The University of Tokyo¹)

11:00 AM - 11:15 AM

△ [17a-B5-7] MONOS-specific interface-state generation/recovery mechanisms related to above stacked SiN layer

^○Shosuke Fujii¹, Kiwamu Sakuma¹ (Toshiba¹)

11:15 AM - 11:30 AM

[17a-B5-8] Estimation method of breakdown electric-field strength by using a molecular orbital calculation technique

^○Shuichiro Wakao^1,3, Hiroshi Seki^2.3, Daisuke Kobayashi³, Tomoyuki Yamamoto¹, Kenji Yasuoka², Kazuyuki Hirose³ (Waseda Univ.¹, Keio Univ.², ISAS/JAXA³)

11:30 AM - 11:45 AM

[17a-B5-9] Impact of InAs insertion layer on Al₂O₃/GaSb MOS interface properties

^○(PC)Masafumi Yokoyama¹, Haruki Yokoyama², Mitsuru Takenaka¹, Shinichi Takagi¹ (The Univ. of Tokyo¹, NTT Photonics Lab. NTT Corp.²)

11:45 AM - 12:00 PM

△ [17a-B5-10] Demonstration of metal S/D schottky-barrier GaSb pMOSFETs

^○(M1)Takahiro Gotow^1,2, Sachie Fujikawa¹, Hiroki I. Fujishiro¹, Mutuso Ogura², Tetsuji Yasuda², Tatsuro Maeda^1,2 (Tokyo University of Science¹, AIST²)

Oral presentation

[17p-B5-1~21] 13.3 Insulator technology

Tue. Sep 17, 2013 1:00 PM - 6:30 PM B5 (TC2 2F-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch （12:00 PM - 1:00 PM）

1:00 PM - 1:15 PM

[17p-B5-1] Synthesis of SrHfO₃ Perovskite Thin Films on Si Substrates

^○Shinji Migita¹, Yukinori Morita¹, Meishoku Masahara¹, Hiroyuki Ota¹ (AIST GNC¹)

1:15 PM - 1:30 PM

△ [17p-B5-2] Stabilization Mechanisms of Meta-Stable Tetragonal ZrO₂ Crystalline Phase

^○Kimihiko Kato¹, Takatoshi Saito¹, Mitsuo Sakashita¹, Noriyuki Taoka¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Grad. School Eng., Nagoya Univ.¹)

1:30 PM - 1:45 PM

[17p-B5-3] Dipole Layer Formation at Al₂O₃/SiO₂ Interface Reproduced by Molecular Dynamics Simulation

^○Ryo Kuriyama¹, Masahiro Hashiguchi¹, Ryusuke Takahashi¹, Atsushi Ogura^3,5, Shinichi Satoh^4,5, Takanobu Watanabe^1,2,5 (Waseda Univ.¹, Waseda-INN², Meiji Univ.³, University of Hyogo⁴, JST-CREST⁵)

1:45 PM - 2:00 PM

[17p-B5-4] Electrostatic filed in channel induced by the dipole layer at Al₂O₃/SiO₂ interface

^○Masahiro Hashiguchi¹, Ryo Kuriyama¹, Ryusuke Takahashi¹, Atsushi Ogura^3,5, Shinichi Satoh^4,5, Takanobu Watanabe^1,2,5 (Waseda Univ¹, Waseda-INN², Meiji Univ³, University of Hyogo⁴, JST-CREST⁵)

2:00 PM - 2:15 PM

[17p-B5-5] Reliability of La-silicate gate Capacitor with tungsten gate electrode

^○Yoshinori Nakamura¹, Shuhei Hosoda¹, Kamale Tuokedaerhan¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Hitoshi Wakabayashi², Nobuyuki Sugii², Kazuo Tsutsui², Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

2:15 PM - 2:30 PM

[17p-B5-6] Electrical properties of ultra thin polycrystalline HfO2 film with very small electrode area

^○Yusuke Tomura¹, Ryu Hasunuma¹, Kikuo Yamabe¹, Shinji Migita² (University of Tsukuba¹, AIST NRI²)

2:30 PM - 2:45 PM

[17p-B5-7] Dielectric Properties of Thick Polycrystalline HfO₂ films

^○Mariko Hayashi¹, Hisanori Momma¹, Ryu Hasunuma¹, Kikuo Yamabe¹ (Univ. of Tsukuba¹)

2:45 PM - 3:00 PM

△ [17p-B5-8] Investigation of EOT scaling of HfO₂/Al₂O₃/SiGe gate stack by plasma post-nitridation

^○(M2C)Jaehoon Han¹, Rui Zhang¹, Takenori Osada², Masahiko Hata², Mitsuru Takenaka¹, Shinichi Takagi¹ (Univ. of Tokyo¹, Sumitomo Chemical Co. Ltd.²)

3:00 PM - 3:15 PM

▲ [17p-B5-9] Investigation of the Substrate Orientation-Dependent on the Electrical Characteristics of HfN Gate Insulator Formed by ECR Plasma Sputtering

^○Nithi Atthi¹, Dae-Hee Han¹, Huiseong Han¹, Shun-ichiro Ohmi¹ (Tokyo Inst. of Tech., Interdisciplinary graduate school of science and engineering¹)

Break （3:15 PM - 3:30 PM）

3:30 PM - 3:45 PM

▲ [17p-B5-10] [Young Scientist Oral Presentation Award Speech](15 min.) Oxygen Potential Lowering in N-doped GeO₂ for Ge MIS Gate Stack Design in Extremely Thin EOT Region

^○Toshiyuki Tabata^1,2, Choong Hyun Lee^1,2, Tomonori Nishimura^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (Univesity of Tokyo¹, JST-CREST²)

3:45 PM - 4:00 PM

▲ [17p-B5-11] Atomically Flat Planarization of Ge (110) and (100) Surface by H2 Annealing

^○Tomonori Nishimura^1,2, Takeaki Yajima^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (The Univ. of Tokyo¹, JST-CREST²)

4:00 PM - 4:15 PM

[17p-B5-12] Fabirication and Evaluation of GeO₂/Ge structure Using Kr/O₂ Plasma Oxidation

^○Yuya Nakatani¹, Marina Yamaguchi¹, Yoshiki Iwasaki¹, Tomo Ueno¹ (Tokyo Univ. of Agri. & Tech.¹)

4:15 PM - 4:30 PM

△ [17p-B5-13] Control of Structure of GeO_x Thin Film Using Low-Temperature and Damage-Free Neutral-Beam Oxidation Process

^○Daiki Nakayama¹, Takeo Ohno², Rui Zhang³, Shinichi Takagi³, Seiji Samukawa^1,2 (IFS, Tohoku Univ.¹, WPI-AIMR, Tohoku Univ.², Univ. of Tokyo³)

4:30 PM - 4:45 PM

△ [17p-B5-14] Metal and Insulator HfN_x films for Ge MIS structure by controlling nitrogen composition

^○(M2)Shu Miura¹, Masatoshi Tanaka¹, Tetsuji Yasuda², Tatsuro Maeda² (Yokohama National Univ.¹, AIST²)

4:45 PM - 5:00 PM

[17p-B5-15] Inspection of Introduction Al₂O₃ Film to Decrease Leak Current

^○Yohma Kuroyanagi¹, Yuya Nakatani¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (Tokyo Univ.of Agri.&Tech.¹)

5:00 PM - 5:15 PM

[17p-B5-16] Improvement of Electric Properties of GeO₂ /Ge Structures Using Post Metallization Annealing

^○Marina Yamaguchi¹, Yuya Nakatani¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (Tokyo Univ. of Agri. & Tech.¹)

5:15 PM - 5:30 PM

△ [17p-B5-17] High-k/Ge Gate Stack with an EOT of 0.56 nm by Controlling High-k/Ge Interface Reaction Using Ultrathin AlO_x Interlayer

^○Ryohei Tanaka¹, Iori Hideshima¹, Yuya Minoura¹, Akitaka Yoshigoe², Yuden Teraoka², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka Univ.¹, JAEA²)

5:30 PM - 5:45 PM

[17p-B5-18] Control of Al₂O₃/Ge Interface Structure Based on Mechanism of Interface Reaction

^○Shigehisa Shibayama^1,2, Kimihiko Kato¹, Mitsuo Sakashita¹, Wakana Takeuchi¹, Noriyuki Taoka¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Naogya Univ.¹, JSPS Research Fellow²)

5:45 PM - 6:00 PM

▼ [17p-B5-19] Influence of Yttrium concentration on the oxidation barrier effect of Y-doped GeO2 interfacial layer

^○Cimang Lu^1,2, Choong Hyun Lee^1,2, Tomonori Nishimura^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (The Univ. of Tokyo¹, JST-CREST²)

6:00 PM - 6:15 PM

▲ [17p-B5-20] Suppression of Surface States inside Conduction Band and Effective Mobility Improvement of Ge nMOSFETs by Atomic Deuterium Annealing

^○Rui Zhang¹, Ju-Chin Lin¹, Xiao Yu¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (Univ. Tokyo¹)

6:15 PM - 6:30 PM

▲ [17p-B5-21] Significant Enhancement of High-Ns electron mobility in Ge n-MOSFETs

^○ChoongHyun Lee^1,2, Cimang Lu^1,2, Toshiyuki Tabata^1,2, Tomonori Nishimura^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (The Univ. of Tokyo¹, JST-CREST²)

Poster presentation

[18p-P9-1~10] 13.3 Insulator technology

Wed. Sep 18, 2013 1:30 PM - 3:30 PM P9 (Davis Memorial Auditorium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

▼ [18p-P9-1] Characterization of Interface Traps in Au/Al₂O₃/GeO_x/Ge MOS Structures

^○JuChin Lin¹, Rui Zhang^1,2, Noriyuki Taoka³, Mitsuru Takenaka¹, Shinichi Takagi¹ (The University of Tokyo¹, Nanjing University², Nagoya University³)

1:30 PM - 3:30 PM

▲ [18p-P9-2] Impacts of Hydrogen and Oxygen on Electrical Properties of Poly-crystalline Germanium Thin Film Transistors

^○Shoichi Kabuyanagi^{1, 2}, Tomonori Nishimura^{1, 2}, Kosuke Nagashio^{1, 2}, Akira Toriumi^{1, 2} (The Univerisity of Tokyo¹, JST-CREST²)

1:30 PM - 3:30 PM

[18p-P9-3] A Study on SiN Fabricated by ECR Sputtering on Si and Ge

^○Shimpei Tachikawa¹, Yuya Nakatani¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (Tokyo Univ. of Agri. & Tech.¹)

1:30 PM - 3:30 PM

[18p-P9-4] The effects of oxidation and reduction annealing on the electrical properties and phase transformation of polycrystalline HfO2 films

^○Hisanori Momma¹, Ryu Hasunuma¹, Kikuo Yamabe¹ (Univ. of Tsukuba¹)

1:30 PM - 3:30 PM

[18p-P9-5] Penetration of H2O and HBr molecules into SiNx films

^○Tomoki Oku¹, Toshihiko Shiga¹, Masahiro Totsuka¹, Masayoshi Takemi¹ (Mitsubisi Electric Corp.¹)

1:30 PM - 3:30 PM

[18p-P9-6] DLTS Evaluation of Near-Interface Traps in GeN_x/Ge Structures Fabricated by ECR-Plasma Techniques Ⅱ

^○Hidehumi Narita¹, Takuro Iwasaki¹, Yukio Fukuda², Yohei Otani², Toshiro Ono¹, Hiroshi Okamoto¹ (Hirosaki Univ.¹, Tokyo Univ. of Sci.²)

1:30 PM - 3:30 PM

[18p-P9-7] Impact of ALD Deposition Condition on Electrical Property
of La₂O₃/In_0.53Ga_0.47As Capacitor

^○Guoqiang Lu¹, Hiroshi Oomine¹, Zadeh Darius¹, Kuniyuki Kakushima², Akira Nishiyama², nabuyuki Sugii², Yoshinori Kataoka², Hitoshi Wakabayashi², Kazuo Tsutsui², Kennji Natori¹, Hiroshi Iwai¹ (FRC, Tokyo Tech.¹, IGSSE, Tokyo Tech.²)

1:30 PM - 3:30 PM

[18p-P9-8] Impact of Post-Metalization Annealing on Chemical Structure in Ge-MIS Capacitors with HfO₂/TaGe_xO_y Dielectrics

^○Kuniaki Hashimoto¹, Akio Ohta¹, Hideki Murakami¹, Seiichiro Higashi¹, Seiichi Miyazaki² (Grad. School of AdSM, Hiroshima Univ.¹, Grad. School of Eng., Nagoya Univ.²)

1:30 PM - 3:30 PM

[18p-P9-9] Healing of defect in SiO₂ film resulting from stress

^○yusuke takigaura¹, ryu hasunuma¹, kikuo yamabe¹ (Tsukuba Univ.¹)

1:30 PM - 3:30 PM

[18p-P9-10] Thermal annealing effect on paramagnetic defects in silicon nitride films (Ⅱ)

Aran Suzuki¹, Shakoor Naushad¹, Rouji Ochiai², Daiki Nagashima², ^○Kiyoteru Kobayashi^1,2 (Graduate School of Engineering, Tokai Univ.¹, Tokai Univ.²)

Sessions

13. Semiconductors A (Silicon) » 13.3 Insulator technology

[17a-B5-1~10] 13.3 Insulator technology

△ [17a-B5-1] Theoretical Analysis of SiO2 Etching Processes by Fluorocarbon Radicals Based on Quantum Chemical Molecular Dynamics Method

△ [17a-B5-3] Forming SiO2 thin Film by CO2 laser Annealing of Spin-On Glass on Polycrystalline Silicon Thin Film

▲ [17a-B5-4] Silicon Surface oxidation and Passivation by Remote Induction-Coupled Oxygen Plasma

▲ [17a-B5-6] Evaluation of Interface State Density of Strained-Si MOS Interfaces by Conductance Method

△ [17a-B5-7] MONOS-specific interface-state generation/recovery mechanisms related to above stacked SiN layer

△ [17a-B5-10] Demonstration of metal S/D schottky-barrier GaSb pMOSFETs

[17p-B5-1~21] 13.3 Insulator technology

△ [17p-B5-2] Stabilization Mechanisms of Meta-Stable Tetragonal ZrO2 Crystalline Phase

△ [17p-B5-8] Investigation of EOT scaling of HfO2/Al2O3/SiGe gate stack by plasma post-nitridation

▲ [17p-B5-9] Investigation of the Substrate Orientation-Dependent on the Electrical Characteristics of HfN Gate Insulator Formed by ECR Plasma Sputtering

▲ [17p-B5-10] [Young Scientist Oral Presentation Award Speech](15 min.) Oxygen Potential Lowering in N-doped GeO2 for Ge MIS Gate Stack Design in Extremely Thin EOT Region

▲ [17p-B5-11] Atomically Flat Planarization of Ge (110) and (100) Surface by H2 Annealing

△ [17p-B5-13] Control of Structure of GeOx Thin Film Using Low-Temperature and Damage-Free Neutral-Beam Oxidation Process

△ [17p-B5-14] Metal and Insulator HfNx films for Ge MIS structure by controlling nitrogen composition

△ [17p-B5-17] High-k/Ge Gate Stack with an EOT of 0.56 nm by Controlling High-k/Ge Interface Reaction Using Ultrathin AlOx Interlayer

▼ [17p-B5-19] Influence of Yttrium concentration on the oxidation barrier effect of Y-doped GeO2 interfacial layer

▲ [17p-B5-20] Suppression of Surface States inside Conduction Band and Effective Mobility Improvement of Ge nMOSFETs by Atomic Deuterium Annealing

▲ [17p-B5-21] Significant Enhancement of High-Ns electron mobility in Ge n-MOSFETs

[18p-P9-1~10] 13.3 Insulator technology

▼ [18p-P9-1] Characterization of Interface Traps in Au/Al2O3/GeOx/Ge MOS Structures

▲ [18p-P9-2] Impacts of Hydrogen and Oxygen on Electrical Properties of Poly-crystalline Germanium Thin Film Transistors

△ [17a-B5-1] Theoretical Analysis of SiO₂ Etching Processes by Fluorocarbon Radicals Based on Quantum Chemical Molecular Dynamics Method

△ [17a-B5-3] Forming SiO₂ thin Film by CO₂ laser Annealing of Spin-On Glass on Polycrystalline Silicon Thin Film

△ [17p-B5-2] Stabilization Mechanisms of Meta-Stable Tetragonal ZrO₂ Crystalline Phase

△ [17p-B5-8] Investigation of EOT scaling of HfO₂/Al₂O₃/SiGe gate stack by plasma post-nitridation

▲ [17p-B5-10] [Young Scientist Oral Presentation Award Speech](15 min.) Oxygen Potential Lowering in N-doped GeO₂ for Ge MIS Gate Stack Design in Extremely Thin EOT Region

△ [17p-B5-13] Control of Structure of GeO_x Thin Film Using Low-Temperature and Damage-Free Neutral-Beam Oxidation Process

△ [17p-B5-14] Metal and Insulator HfN_x films for Ge MIS structure by controlling nitrogen composition

△ [17p-B5-17] High-k/Ge Gate Stack with an EOT of 0.56 nm by Controlling High-k/Ge Interface Reaction Using Ultrathin AlO_x Interlayer

▼ [18p-P9-1] Characterization of Interface Traps in Au/Al₂O₃/GeO_x/Ge MOS Structures