[18p-P9-1~10] 13.3 Insulator technology

[18p-P9-7] Impact of ALD Deposition Condition on Electrical Property
of La₂O₃/In_0.53Ga_0.47As Capacitor

^○Guoqiang Lu¹, Hiroshi Oomine¹, Zadeh Darius¹, Kuniyuki Kakushima², Akira Nishiyama², nabuyuki Sugii², Yoshinori Kataoka², Hitoshi Wakabayashi², Kazuo Tsutsui², Kennji Natori¹, Hiroshi Iwai¹ (FRC, Tokyo Tech.¹, IGSSE, Tokyo Tech.²)

Keywords:InGaAs,High-k,ALD