The 74th JSAP Autumn Meeting,2013

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Poster presentation

13. Semiconductors A (Silicon) » 13.3 Insulator technology

[18p-P9-1~10] 13.3 Insulator technology

Wed. Sep 18, 2013 1:30 PM - 3:30 PM P9 (Davis Memorial Auditorium)

1:30 PM - 3:30 PM

[18p-P9-10] Thermal annealing effect on paramagnetic defects in silicon nitride films (Ⅱ)

Aran Suzuki1, Shakoor Naushad1, Rouji Ochiai2, Daiki Nagashima2, ○Kiyoteru Kobayashi1,2 (Graduate School of Engineering, Tokai Univ.1, Tokai Univ.2)

Keywords:不揮発性メモリ,ESR,シリコン窒化膜