Metal and Insulator HfN<sub>x</sub> films for Ge MIS structure by controlling nitrogen composition<br>

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.3 Insulator technology

Tue. Sep 17, 2013 1:00 PM - 6:30 PM B5 (TC2 2F-201)

4:30 PM - 4:45 PM

^○(M2)Shu Miura¹, Masatoshi Tanaka¹, Tetsuji Yasuda², Tatsuro Maeda² (Yokohama National Univ.¹, AIST²)

Keywords:Ge,HfN,MIS