Dipole Layer Formation at Al2O3/SiO2 Interface Reproduced by Molecular Dynamics Simulation

Ryo Kuriyama

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Oral presentation

13. Semiconductors A (Silicon) » 13.3 Insulator technology

[17p-B5-1~21] 13.3 Insulator technology

Tue. Sep 17, 2013 1:00 PM - 6:30 PM B5 (TC2 2F-201)

1:30 PM - 1:45 PM

[17p-B5-3] Dipole Layer Formation at Al₂O₃/SiO₂ Interface Reproduced by Molecular Dynamics Simulation

^○Ryo Kuriyama¹, Masahiro Hashiguchi¹, Ryusuke Takahashi¹, Atsushi Ogura^3,5, Shinichi Satoh^4,5, Takanobu Watanabe^1,2,5 (Waseda Univ.¹, Waseda-INN², Meiji Univ.³, University of Hyogo⁴, JST-CREST⁵)

Keywords:分子動力学,ダイポール,シミュレーション

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Presentation information

[17p-B5-1~21] 13.3 Insulator technology

[17p-B5-3] Dipole Layer Formation at Al2O3/SiO2 Interface Reproduced by Molecular Dynamics Simulation

[17p-B5-3] Dipole Layer Formation at Al₂O₃/SiO₂ Interface Reproduced by Molecular Dynamics Simulation