[17p-B5-1~21] 13.3 Insulator technology

▼ [17p-B5-19] Influence of Yttrium concentration on the oxidation barrier effect of Y-doped GeO2 interfacial layer

^○Cimang Lu^1,2, Choong Hyun Lee^1,2, Tomonori Nishimura^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (The Univ. of Tokyo¹, JST-CREST²)

Keywords:Ge,High-k