The 74th JSAP Autumn Meeting,2013

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Oral presentation

13. Semiconductors A (Silicon) » 13.3 Insulator technology

[17p-B5-1~21] 13.3 Insulator technology

Tue. Sep 17, 2013 1:00 PM - 6:30 PM B5 (TC2 2F-201)

5:00 PM - 5:15 PM

[17p-B5-16] Improvement of Electric Properties of GeO2 /Ge Structures Using Post Metallization Annealing

○Marina Yamaguchi1, Yuya Nakatani1, Yoshitaka Iwazaki1, Tomo Ueno1 (Tokyo Univ. of Agri. & Tech.1)

Keywords:GeO2,Post Metallization Annealing,吸湿性