[17p-B5-1~21] 13.3 Insulator technology

▲ [17p-B5-9] Investigation of the Substrate Orientation-Dependent on the Electrical Characteristics of HfN Gate Insulator Formed by ECR Plasma Sputtering

^○Nithi Atthi¹, Dae-Hee Han¹, Huiseong Han¹, Shun-ichiro Ohmi¹ (Tokyo Inst. of Tech., Interdisciplinary graduate school of science and engineering¹)

Keywords:Hafnium nitride,High-k gate insulator,ECR plasma sputtering