[17p-B5-1~21] 13.3 絶縁膜技術

▲ [17p-B5-9] Investigation of the Substrate Orientation-Dependent on the Electrical Characteristics of HfN Gate Insulator Formed by ECR Plasma Sputtering

^○Nithi Atthi，Dae-Hee Han，Huiseong Han，Shun-ichiro Ohmi (東工大院　総理工)

キーワード：Hafnium nitride,High-k gate insulator,ECR plasma sputtering