The 74th JSAP Autumn Meeting,2013

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.5 Compound solar cells

[17p-D6-1~18] 14.5 Compound solar cells

Tue. Sep 17, 2013 2:00 PM - 7:00 PM D6 (MK 3F-301)

5:45 PM - 6:00 PM

[17p-D6-14] Characterization of Intermediate Band Solar Cells Using GaAs:N Delta-Doped Superlattice

○Shuhei Yagi1, Shunsuke Noguchi1, Yasuto Hijikata1, Shigeyuki Kuboya2, Kentaro Onabe3, Yoshitaka Okada4, Hiroyuki Yaguchi1 (Saitama Univ.1, IMR, Tohoku Univ.2, Dept. of Adv. Mat. Sci., The Univ. of Tokyo3, RCAST, The Univ. of Tokyo4)

Keywords:GaAsN,中間バンド型太陽電池,超格子