Oral presentation

[17a-D6-1~11] 14.5 Compound solar cells

Tue. Sep 17, 2013 9:30 AM - 12:30 PM D6 (MK 3F-301)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 9:45 AM

[17a-D6-1] Increase in Conductivity of Transparent and Conductive Adhesive for Fabricating Multi-Junction Solar Cells

^○Shinya Yoshidomi¹, Jun Furukawa¹, Masahiko Hasumi¹, Toshiyuki Sameshima¹ (TUAT¹)

9:45 AM - 10:00 AM

▲ [17a-D6-2] Photoluminescence of single crystal thin film CuGaSe2:Zn grown on GaAs(001)

^○Sathiabama Thiru^1,2, Tomotaka Sato^1,2, Kouki Toyoda^1,2, Miki Fujita^1,2, Yoshiji Horikoshi^1,2 (Waseda University¹, Kagami Memorial Lab.²)

10:00 AM - 10:15 AM

[17a-D6-3] Characterization of surface potential on CIGS solar cells by Kelvin probe force microscopy

^○Tomoaki Ishii¹, Takashi Minemoto³, Takuji Takahashi^1,2 (IIS, The Univ. of Tokyo¹, INQUE, The Univ. of Tokyo², Fac. of Sci. and Eng. Ritsumeikan Univ.³)

10:15 AM - 10:30 AM

[17a-D6-4] Effect of the deposition way in Cu(In, Ga) Se2 thin films on the formation of Cu2-δSe

^○(M2)Takehiro Nazuka¹, Yutaro Takabayashi¹, Katsuhiro Akimoto¹, Takeaki Sakurai¹, Shigeru Niki², Akimasa Yamada², Syogo Ishizuka², Kouzi Matsubara² (Tsukuba Univ.¹, AIST²)

10:30 AM - 10:45 AM

△ [17a-D6-5] Non-destructive structural characterization of Cu(In,Ga)Se₂ solar cell layers fabricated by 3-stage process

^○Shota Minoura¹, Takuji Maekawa², Shigeru Niki³, Hiroyuki Fujiwara¹ (Gifu University¹, ROHM², AIST³)

10:45 AM - 11:00 AM

[17a-D6-6] Fabrication of transparent p-type Cu_xZn_yS thin films by photochemical deposition and application for heterojunction

^○Yosuke Maeda¹, Masaya Ichimura¹ (Nagoya Inst. of Tech.¹)

Break （11:00 AM - 11:15 AM）

11:15 AM - 11:30 AM

[17a-D6-7] Fabrication of iron sulfide by electrochemical deposition

^○Ryuta Yamazaki¹, Shoichi Kawai², Masaya Ichimura¹ (Nagoya Inst. of Tech.¹, DENSO CORP. Research Laboratories²)

11:30 AM - 11:45 AM

[17a-D6-8] Controlling crystal orientation of SnS thin films by sulfurization

^○Kazuma Hisatomi¹, Hiro Nagayasu¹, Takashi Hiramatsu¹, Mutsumi Sugiyama¹ (Faculty of Sci. & Tech./RIST,Tokyo Univ. of Science¹)

11:45 AM - 12:00 PM

△ [17a-D6-9] Nontoxic and Earth-Abundant Compound Thin-Film Solar Cells using Cu₂Sn_1-xGe_xS₃

^○Mitsutaro Umehara¹, Yasuhiko Takeda¹, Tomoyoshi Motohiro¹, Takenobu Sakai², Ryosuke Maekawa² (Toyota Central R&D Labs., Inc.¹, Toyota Motor Corporation²)

12:00 PM - 12:15 PM

[17a-D6-10] Hetero-junction thin-film solar cell utilizing Cu₂(Sn_1-xGe_x)S₃ absorber layer

^○Takahiro Mandokoro¹, Than Htay Myo¹, Noritaka Momose², Toshinori Taishi¹, Yoshio Hashimoto¹, Kentaro Ito¹ (Shinshu Univ.¹, Nagano National Col. Tech.²)

12:15 PM - 12:30 PM

[17a-D6-11] First-principles study of absorber/Mo interface in polycrystalline thin film solar cells

^○(PC)Akio Shigemi¹, Takahiro Wada¹ (Ryukoku Univ.¹)

Oral presentation

[17p-D6-1~18] 14.5 Compound solar cells

Tue. Sep 17, 2013 2:00 PM - 7:00 PM D6 (MK 3F-301)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch （12:30 PM - 2:00 PM）

2:00 PM - 2:30 PM

[17p-D6-1] [JSAP Paper Award Speech](30 min.) Synthesis of Cu₂ZnSn(S,Se)₄ Nanoparticles for Application in Low-Cost Solar Cells

^○Yiwen Zhang^1,2, Tomohiro Yoshihara¹, Akira Yamada¹ (Titech¹, TOPPAN PRINTING²)

2:30 PM - 2:45 PM

[17p-D6-2] Recrystallization of Cu2ZnSnS4 thin films using Sn vapor transport II

^○Toshihiko Toyama¹, Ryotaro Tsuji¹, Kengo Terai², Yuto Nakashima², Yasuo Tsutsumi² (KFTL, Osaka Univ.¹, Akashi Nat'l Col. of Tech.²)

2:45 PM - 3:00 PM

[17p-D6-3] Characterization of the CIGS solar cell process using the Photoluminescence [Ⅱ]

^○Shogo Yoshida¹, Hiroyuki Ohta¹, Shinji Yudate¹, Akira Miyata¹, Sho Shirakata¹ (Grad.School Sci.&Eng.Ehime Univ¹)

3:00 PM - 3:15 PM

△ [17p-D6-4] Electrical properties of quaternary compound Cu₂ZnSnS₄ single crystal II

^○Akira Nagaoka^{1, 4}, Kenji Yoshino¹, Hideto Miyake², Koichi Kakimoto³ (Miyazaki Univ.¹, MIe Univ.², Kyushu Univ.³, JSPS Research Fellow⁴)

3:15 PM - 3:30 PM

[17p-D6-5] Characterization of the absorption coefficient for Cu₂ZnSnSe₄ thin films by spectroscopic ellipsometry

^○Yoshiki Hirate¹, Hitoshi Tampo², Shota Minoura¹, Hajime Shibata², Shigeru Niki², Hiroyuki Fujiwara¹ (Gifu Univ.¹, AIST²)

3:30 PM - 3:45 PM

[17p-D6-6] Study of Band alignment at Interface between MBE-CdS and CZTSSe by in-situ PES/IPES

^○Kosuke Chochi¹, Hideki Morita¹, Sho Yoshimoto¹, Takayuki Fukuyama¹, Hitosi Tampo², Hazime Shibata², Kouzi Matsubara², Shigeru Niki², Hideki Hakuma³, Hiroki Sugimoto³, Takuya Kato³, Yoshiaki Tanaka³, Norio Terada^1,2 (Kagoshima Univ.¹, AIST², Showa Shell Sekiyu³)

3:45 PM - 4:00 PM

[17p-D6-7] Effects of MOVPE InGaN growth on solar cell properties of p-on-n structure Si substrate

Akihiro Mihara^1,2, Naoteru Shigekawa³, ^○Akio Yamamoto^1,2 (Univ. of Fukui¹, JST-CREST², Osaka City Univ.³)

4:00 PM - 4:15 PM

▲ [17p-D6-8] Conversion Efficiency of Double-Junction Tandem Solar Cells Depending on Internal Luminescence Quantum Yields

^○Lin Zhu¹, Changsu Kim¹, Masahiro Yoshita¹, Shaoqiang Chen¹, Shintaroh Sato¹, Hidefumi Akiyama¹, Yoshihiko Kanemitsu² (ISSP,Univ. of Tokyo¹, ICR, Kyoto Univ.²)

4:15 PM - 4:30 PM

[17p-D6-9] Fabrication of InGaP/Si Tandem Cells Using Surface-Activated Bonding

^○Jianbo Liang¹, Syouta Nisida¹, Syouta Nisida¹, Naoteru Shigekawa¹ (Osaka City University¹)

4:30 PM - 4:45 PM

[17p-D6-10] InGaP solar cells fabricated using solid-source MBE

^○Akihiro Takeda^1,2, Takeyoshi Sugaya¹, Ryuji Oshima¹, Kikuo Makita¹, Koji Matsubara¹, Shigeru Niki¹, Yoshinobu Okano² (AIST¹, Tokyo City Univ.²)

Break （4:45 PM - 5:00 PM）

5:00 PM - 5:15 PM

[17p-D6-11] [Young Scientist Oral Presentation Award Speech](15 min.) Direct Observation of Conduction Electrons by Visible Light Photoemission Spectroscopy

^○Fumiaki Ichihashi¹, Daiki Shimura¹, Kenji Nishitani¹, Nakoto Kuwahara¹, Takahiro Ito¹, Shunta Harada¹, Miho Tagawa¹, Toru Ujihara¹ (Nagoya Univ.¹)

5:15 PM - 5:30 PM

[17p-D6-12] Characterization of ITO/p-InP Hetero-Junction Nanowire-Array Solar Cells

^○Masatoshi Yoshimura^1,2, Eiji Nakai^1,2, Katsuhiro Tomioka^1,2,3, Takashi Fukui^1,2 (Hokkaido Univ.¹, RCIQE², JST-PRESTO³)

5:30 PM - 5:45 PM

[17p-D6-13] Analysis of VLS-grown InP nanowire solar cells

^○Kouta Tateno¹, Guoqiang Zhang¹, Hideki Gotoh¹ (NTT Basic Research Labs.¹)

5:45 PM - 6:00 PM

[17p-D6-14] Characterization of Intermediate Band Solar Cells Using GaAs:N Delta-Doped Superlattice

^○Shuhei Yagi¹, Shunsuke Noguchi¹, Yasuto Hijikata¹, Shigeyuki Kuboya², Kentaro Onabe³, Yoshitaka Okada⁴, Hiroyuki Yaguchi¹ (Saitama Univ.¹, IMR, Tohoku Univ.², Dept. of Adv. Mat. Sci., The Univ. of Tokyo³, RCAST, The Univ. of Tokyo⁴)

6:00 PM - 6:15 PM

△ [17p-D6-15] Observation of Conduction Electrons in Superlattice Structure by Visible-Light Photoemission Spectroscopy

^○Kenji Nishitani¹, Fumiaki Ichihashi¹, Daiki Shimura¹, Makoto Kuwahara¹, Takahiro Ito¹, Shunta Harada¹, Miho Tagawa¹, Toru Ujihara¹ (Nagoya Univ.¹)

6:15 PM - 6:30 PM

△ [17p-D6-16] Evaluation of Mini-Bands Formed in Superlattice by Angle-Resolved Photoemission Spectroscopy Measurement

^○Daiki Shimura¹, Fumiaki Ichihashi¹, Kenji Nishitani¹, Shunta Harada¹, Takahiro Ito¹, Makoto Kuwahara¹, Masaharu Matsunami², Shin-ich Kimura², Miho Tagawa¹, Toru Ujihara¹ (Nagoya Univ.¹, IMS/UVSOR²)

6:30 PM - 6:45 PM

△ [17p-D6-17] Observation of two-step photon absorption process in a single quantum dot for intermediate band solar cell

^○Tomohiro Nozawa^1,2,3, Hiroyuki Takagi^1,2, Katsuyuki Watanabe¹, Yasuhiko Arakawa^1,2 (Nano Quine¹, Univ. of Tokyo², SHARP³)

6:45 PM - 7:00 PM

[17p-D6-18] Optical Absorption in Quantum Dot Superlattices Using a Wide-gap Matrix

^○Hirofumi Yoshikawa¹, Teruhisa Kotani¹, Yasutaka Kuzumoto¹, Makoto Izumi¹, Yoshitaka Tomomura¹, Chihiro Hamaguchi¹ (SHARP Corp.¹)

Poster presentation

[18p-P12-1~16] 14.5 Compound solar cells

Wed. Sep 18, 2013 1:30 PM - 3:30 PM P12 (Davis Memorial Auditorium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[18p-P12-1] Fabrication of thin films based on Cu₂ZnSnSe₄ nanocrystal

^○Tsukasa Suzuki¹, Toshimasa Suzuki¹, Shigeo Hori¹, koki Uehara¹, Shuiti Nonomura¹ (Gifu University¹)

1:30 PM - 3:30 PM

[18p-P12-2] Synthesis of Cu2ZnSnS4 nanoparticle and investigation of thin film fabrication

^○Shigeo Hori¹, Toshimasa Suzuki¹, Tsukasa Suzuki¹, Takahiro Suzuki¹, Shuichi Nonomura¹ (Gifu Univ.¹)

1:30 PM - 3:30 PM

[18p-P12-3] The Effect of Different Alcohol in Spray Source for CZTS Thin Films

^○Masayuki Yoshioka¹, Hisashi Miyazaki¹, Yoichi Okamoto¹, Jun Morimoto¹ (National Defense Academy¹)

1:30 PM - 3:30 PM

[18p-P12-4] Influence of Br-related wet etching for CZTS thin films

^○Hisashi Miyazaki¹, Masami Aono¹, Hiroaki Kishimura¹, Hironori Katagiri² (Natl. Def. Acad.¹, Nagaoka Nat. College of Tech.²)

1:30 PM - 3:30 PM

[18p-P12-5] Grain control of SnS thin films by sulfurization

^○Hiro Nagayasu¹, Kazuma Hisatomi¹, Takashi Hiramatsu¹, Satoru Aihara¹, Takuya Tsugawa¹, Mutsumi Sugiyama¹ (Faculty of Sci. & Tech./RIST, Tokyo Univ. of Science¹)

1:30 PM - 3:30 PM

[18p-P12-6] Compound semiconductor deposition into TiO₂ porous thin film using supercritical fluid

^○shinji Watanabe¹, Miki Yanaka¹, Takaaki Tomai¹, Itaru Honma¹ (Tohoku Univ. IMRAM¹)

1:30 PM - 3:30 PM

[18p-P12-7] Characterization of CZTS compound semiconductor film fabricated via selenization using SeO₂

^○Takaaki Tomai¹, Yuta Nakayasu¹, Masatomo Sumiya², Itaru Honma¹ (Tohoku Univ.¹, NIMS²)

1:30 PM - 3:30 PM

▲ [18p-P12-8] Characterization of deep defects in Cu(In,Ga)Se₂ by transient photo-capacitance method

^○(D)Hu Xiaobo¹, Takeaki Sakurai¹, Katsuhiro Akimoto¹, Akimasa Yamada², Shogo Ishizuka², Shigeru Niki² (Univ. of Tsukuba¹, AIST²)

1:30 PM - 3:30 PM

[18p-P12-9] Excitonic absorptions of AlGaAs / GaAs superlattice solar cells

^○Jiro Nishinaga^1,2, Atsushi Kawaharazuka^1,2, Koji Onomitsu³, Klaus Ploog^1,2, Yoshiji Horikoshi^1,2 (Waseda Univ.¹, JST CREST², NTT BRL³)

1:30 PM - 3:30 PM

[18p-P12-10] Chemical bath deposition of ZnS thin films by acidic solutions

^○Kazuki Ito¹, Kazuyuki Akasaka¹, Masao Miyake¹, Tetsuji Hirato¹ (Kyoto Univ.¹)

1:30 PM - 3:30 PM

[18p-P12-11] Effect of i-ZnS layer insertion on photovoltaic properties of n-ZnS/p-ZnTe solar cells

^○(M1)Shin Haraguchi¹, Masaki Miyabara¹, Tooru Tanaka^1,2, Katsuhiko Saito¹, Qixin Guo¹, Mitsuhiro Nishio¹ (Saga Univ.¹, JST PRESTO²)

1:30 PM - 3:30 PM

[18p-P12-12] Localized level characterization of ZnTeO by light irradiation DLTS method

^○Naoki Tsuboya¹, Junich Hinata¹, Youichi Nabetani¹, Tsutomu Muranaka¹, Takashi Matsumoto¹ (Yamanashi Univ.¹)

1:30 PM - 3:30 PM

[18p-P12-13] Photovoltaic properties of PbS quantum dots/metal oxide heterojunction solar cells -Dependence of nanostructured metal oxides-

^○Yuki Kuga¹, Yuhei Ogomi^2,4, Shuzi Hayase^2,4, Kenji Yoshino^3,4, Taro Toyoda^1,4, Qing Shen^1,4 (Univ.Electro-Commun.¹, Kyushu Inst. Tech.², Miyazaki Univ.³, CREST JST⁴)

1:30 PM - 3:30 PM

[18p-P12-14] Characterization study of InAs/GaAs quantum dot solar cells using the finite element method

^○Takashi Masuhara¹, Amir Mehdipour¹, Satofumi Souma¹, Matsuto Ogawa¹ (Kobe univ.¹)

1:30 PM - 3:30 PM

[18p-P12-15] Fabrication and characterization of InGaAs axial nanowire array solar cells

^○Eiji Nakai¹, Masatoshi Yoshimura¹, Katsuhiro Tomioka^1,2, Takashi Fukui¹ (Graduate School of IST and RCIQE, Hokkaido Univ.¹, JST-PRESTO²)

1:30 PM - 3:30 PM

[18p-P12-16] Relationship between Jsc and InGaN/GaN MQW structure in solar cells

^○Noriyuki Watanabe¹, Manabu Mitsuhara¹, Haruki Yokoyama¹, Jianbo Liang², Naoteru Shigekawa² (NTT Photonics Labs.¹, Osaka City Univ.²)

Sessions

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.5 Compound solar cells

[17a-D6-1~11] 14.5 Compound solar cells

▲ [17a-D6-2] Photoluminescence of single crystal thin film CuGaSe2:Zn grown on GaAs(001)

△ [17a-D6-5] Non-destructive structural characterization of Cu(In,Ga)Se2 solar cell layers fabricated by 3-stage process

△ [17a-D6-9] Nontoxic and Earth-Abundant Compound Thin-Film Solar Cells using Cu2Sn1-xGexS3

[17p-D6-1~18] 14.5 Compound solar cells

△ [17p-D6-4] Electrical properties of quaternary compound Cu2ZnSnS4 single crystal II

▲ [17p-D6-8] Conversion Efficiency of Double-Junction Tandem Solar Cells Depending on Internal Luminescence Quantum Yields

△ [17p-D6-15] Observation of Conduction Electrons in Superlattice Structure by Visible-Light Photoemission Spectroscopy

△ [17p-D6-16] Evaluation of Mini-Bands Formed in Superlattice by Angle-Resolved Photoemission Spectroscopy Measurement

△ [17p-D6-17] Observation of two-step photon absorption process in a single quantum dot for intermediate band solar cell

[18p-P12-1~16] 14.5 Compound solar cells

▲ [18p-P12-8] Characterization of deep defects in Cu(In,Ga)Se2 by transient photo-capacitance method

△ [17a-D6-5] Non-destructive structural characterization of Cu(In,Ga)Se₂ solar cell layers fabricated by 3-stage process

△ [17a-D6-9] Nontoxic and Earth-Abundant Compound Thin-Film Solar Cells using Cu₂Sn_1-xGe_xS₃

△ [17p-D6-4] Electrical properties of quaternary compound Cu₂ZnSnS₄ single crystal II

▲ [18p-P12-8] Characterization of deep defects in Cu(In,Ga)Se₂ by transient photo-capacitance method