[17p-P2-1~49] 8 Plasma Electronics

[17p-P2-29] Damage Characteristics of n-GaN Surface Etched by UV Light-Assisted He Plasma

^○Retsuo Kawakami¹, Masahito Niibe², Yoshitaka Nakano³, Takashi Mukai⁴, Tatsuo Shirahama¹, Tetsuya Yamada¹, Kazuma Aoki¹, Yuya Naka¹, Mari Takabatake¹, Kenta Oba¹ (Tokushima Univ.¹, Hyogo Univ.², Chubu Univ.³, Nichia Corp.⁴)

Keywords:n-GaN,紫外光,He plasma