[17p-P7-1~15] 15.4 III-V-group nitride crystals

[17p-P7-4] Liquid phase electroepitaxy with tungsten mask for GaN lateral growth

^○Hiroyuki Takakura¹, Masafumi Tomita¹, Daisuke Kanbayashi¹, Muneki Iwakawa¹, Yousuke Mizuno¹, Junpei Yamada¹, Shigeya Narituka¹, Takahiro Maruyama¹ (Meijo Univ.¹)

Keywords:LPEE,GaN,選択成長