[17p-P7-1~15] 15.4 III-V-group nitride crystals

Tue. Sep 17, 2013 1:30 PM - 3:30 PM P7 (Davis Memorial Auditorium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[17p-P7-1] Dependence on the supply rate of BCl₃ for the growth of hexagonal boron nitride films on sapphire substrates by high-temperature chemical vapor deposition

^○HYEYOUNG LEE¹, Naoki Umehara¹, Iori Kuwahara¹, Tetsuya Kouno¹, Hiroko Kominami¹, Youichirou Nakanishi¹, Kazuhiko Hara^1,2 (Shizuoka Univ.¹, Shizuoka Univ.²)

1:30 PM - 3:30 PM

[17p-P7-2] AlN interlayer deposition temperature dependence of MOVPE growth of GaN on (110)Si

^○Kengo Nawa¹, Tadashi Mitsunari¹, Yoshio Honda¹, Masahito Yamaguchi^1,2, Hiroshi Amano^1,2 (Nagoya Univ.¹, Akasaki Reseach Center²)

1:30 PM - 3:30 PM

[17p-P7-3] Observation of In-content Distribution on an m-plane InGaN Film with Vicinal Hillocks

^○Kanako Shojiki¹, Takashi Hanada¹, JungHung Choi¹, Takaaki Shimada¹, Yasuhiko Imai², Shigeru Kimura², Tomoyuki Tanikawa¹, Ryuji Katayama¹, Takashi Matsuoka¹ (IMR, Tohoku Univ.¹, JASRI²)

1:30 PM - 3:30 PM

[17p-P7-4] Liquid phase electroepitaxy with tungsten mask for GaN lateral growth

^○Hiroyuki Takakura¹, Masafumi Tomita¹, Daisuke Kanbayashi¹, Muneki Iwakawa¹, Yousuke Mizuno¹, Junpei Yamada¹, Shigeya Narituka¹, Takahiro Maruyama¹ (Meijo Univ.¹)

1:30 PM - 3:30 PM

[17p-P7-5] Fabrication of freestanding {20-21} GaN substrates by HVPE and LED application

^○(PC)Keisuke Yamane¹, Yasuhiro Hashimoto¹, Takashi Inagaki¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (Grad. School of Sci. & Eng.¹)

1:30 PM - 3:30 PM

[17p-P7-6] Energy Band Diagrams of Mg doped InN Analyzed by Hard X-ray Photoelectron Spectroscopy

^○Masataka Imura¹, Yasuo Koide¹, Yasushi Nanishi^4,5, Tsutomu Araki⁴, Tomohiro Yamaguchi³, Yoshiyuki Yamashita², Hideki Yoshikawa², Keisuke Kobayashi², Shunsuke Tsuda¹, Takahiro Nagata¹, Hiroyuki Takeda¹, A.L. Yang², Masamitsu Kaneko⁴, Nao Uematsu⁴ (NIMS¹, SPring-8 NIMS², Kogakuin Univ.³, Ritsumeikan Univ.⁴, Seoul National Univ.⁵)

1:30 PM - 3:30 PM

[17p-P7-7] Influence of chemical bonding state at gate metal（Ti or TiSi2）/AlGaN interface by annealing treatment

^○Daiusuke Nohata¹, Kuniyuki Kakushima², Hiroshi Iwai³, Hiroshi Nohira¹ (Tokyo City Univ¹, IGSSE. Tokyo Inst. of Tech², FRC. Tokyo Inst. of Tech³)

1:30 PM - 3:30 PM

[17p-P7-8] Effects of (Al,Ga)Ox/GaN interface states on GaN-based Schottky-type light-emitting diodes

^○(M1)Shuhei Fujioka¹, Ryosuke Amiya¹, Takeyoshi Onuma^1,2, Tomohiro Yamaguchi¹, Tohru Honda¹ (Kogakuin University¹, TNCT²)

1:30 PM - 3:30 PM

[17p-P7-9] Sutudy on deep-ultraviolet light emitting diode using InAlGaN active layer

^○Masataka Kato¹, Makoto Miyoshi¹, Takashi Egawa¹ (Nagoya Inst. of tech¹)

1:30 PM - 3:30 PM

[17p-P7-10] Study on Cathodoluminescence Mapping of Si-doped Al_xGa_1-xN/Al_yGa_1-yN Multiple Quantum Well Structures (x~0.6) Grown by LP-MOVPE

^○Satoshi Kurai¹, Koji Anai¹, Ayumu Wakamatsu¹, Hideto Miyake², Kazumasa Hiramatsu², Yoichi Yamada¹ (Yamaguchi Univ.¹, Mie Univ.²)

1:30 PM - 3:30 PM

[17p-P7-11] Correlation between dark-spot distribution of barrier layers and emission distribution of active layers in InGaN quantum wells

^○Masataka Shinoda¹, Daisuke Hosokawa¹, Satoshi Kurai¹, Narihito Okada¹, Kazuyuki Tadatomo¹, Yoichi Yamada¹ (Yamaguchi Univ.¹)

1:30 PM - 3:30 PM

[17p-P7-12] Thermal stability of biexcitons in AlGaN epitaxial layers

^○Yujiroh Furutani¹, Fumiya Nakao¹, Satoshi Kurai¹, Hideto MIyake², Kazumasa Hiramatsu², Yoichi Yamada¹ (Yamaguchi Univ.¹, Mie Univ.²)

1:30 PM - 3:30 PM

[17p-P7-13] Simulation of Light-Absorption Utilizing GaN/AlN Intersubband-Transition

^○Naruaki Itoh¹, Sodabanlu Hassanet¹, Masakazu Sugiyama¹, Yoshiaki Nakano¹ (Univ. of Tokyo¹)

1:30 PM - 3:30 PM

[17p-P7-14] Growth of GaN-Related Nanowires on a (111)Si Substrate by RF-MBE by Alternative Supply Method

^○Syunsuke Mizutani¹, Yoshio Honda¹, Masahito Yamaguchi^1,2, Hiroshi Amano^1,2 (Nagoya Univ.¹, Akasaki Research Center.²)

1:30 PM - 3:30 PM

[17p-P7-15] Investigation of GaN cap layer growth conditions for InN/GaN dots multilayer structures

^○Hidetoshi Tokuda¹, Misao Orihara¹, Syuhei Yagi¹, Yasuto Hijikata¹, Hiroyuki Yaguchi¹ (Saitama Univ.¹)

Session information

[17p-P7-1~15] 15.4 III-V-group nitride crystals