[17p-P7-1~15] 15.4 III-V-group nitride crystals

[17p-P7-7] Influence of chemical bonding state at gate metal（Ti or TiSi2）/AlGaN interface by annealing treatment

^○Daiusuke Nohata¹, Kuniyuki Kakushima², Hiroshi Iwai³, Hiroshi Nohira¹ (Tokyo City Univ¹, IGSSE. Tokyo Inst. of Tech², FRC. Tokyo Inst. of Tech³)

Keywords:SR-XPS,gate metal,AlGaN