[17p-P7-1~15] 15.4 III-V-group nitride crystals

[17p-P7-8] Effects of (Al,Ga)Ox/GaN interface states on GaN-based Schottky-type light-emitting diodes

^○(M1)Shuhei Fujioka¹, Ryosuke Amiya¹, Takeyoshi Onuma^1,2, Tomohiro Yamaguchi¹, Tohru Honda¹ (Kogakuin University¹, TNCT²)

Keywords:表面改質,ショットキー接合,発光ダイオード