Sutudy on deep-ultraviolet light emitting diode using InAlGaN active layer

Presentation information

Poster presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Tue. Sep 17, 2013 1:30 PM - 3:30 PM P7 (Davis Memorial Auditorium)

1:30 PM - 3:30 PM

^○Masataka Kato¹, Makoto Miyoshi¹, Takashi Egawa¹ (Nagoya Inst. of tech¹)

Keywords:InAlGaN