The 74th JSAP Autumn Meeting,2013

Presentation information

Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

[18a-B3-1~9] 15.6 IV-group-based compounds

Wed. Sep 18, 2013 9:00 AM - 11:30 AM B3 (TC2 1F-105)

9:45 AM - 10:00 AM

[18a-B3-4] Effects of an Al additive in Si-Ni flux on the flux growth of SiC

Aomi Onuma1, Shingo Maruyama1, Shunta Harada2, Toru Ujihara2, Tomohisa Kato3,4, Kazuhisa Kurashige4,5, Hajime Okumura3,4, Yuji Matsumoto1,6 (MSL, Tokyo Tech1, Nagoya Univ.2, AIST3, FUPET4, Hitachi Chemical5, Tohoku Univ.6)

Keywords:SiC,フラックス