Molecular Dynamics Analysis of Surface Reaction Kinetics during Si Etching in Cl-based Plasmas: Effects of Etch By-Products Ion Incidence

Presentation information

Oral presentation

08. Plasma Electronics » 8.4 Plasma etching

Wed. Sep 18, 2013 9:30 AM - 11:45 AM C2 (TC3 1F-102)

11:15 AM - 11:30 AM

^○(D)Nobuya Nakazaki¹, Yoshinori Takao¹, Koji Eriguchi¹, Kouichi Ono¹ (Kyoto Univ.¹)

Keywords:Siエッチング,分子動力学法,エッチング副生成物イオン