[18a-C7-1~10] 6.4 New thin-film materials

▼ [18a-C7-8] Zero Area Overhead State Retention Flip Flop Utilizing Crystalline In-Ga-Zn Oxide Technology

^○Niclas Sjokvist^1,2, Takuro Ohmaru¹, Kazuma Furutani¹, Atsuo Isobe¹, Naoaki Tsutsui¹, Hikaru Tamura¹, Wataru Uesugi¹, Takahiko Ishizu¹, Tatsuya Onuki¹, Kazuaki Ohshima¹, Takanori Matsuzaki¹, Hidetoshi Mimura¹, Atsushi Hirose¹, Yasutaka Suzuki¹, Yoshinori Ieda¹, Tomoaki Atsumi¹, Yutaka Shionoiri¹, Kiyoshi Kato¹, Gensuke Goto¹, Jun Koyama¹, Masahiro Fujita³, Shunpei Yamazaki¹ (SEL¹, Linkoping University²)

Keywords:Oxide Semiconductor,State Retention Flip Flop,Low Power