[18a-C7-1~10] 6.4 薄膜新材料

▼ [18a-C7-8] Zero Area Overhead State Retention Flip Flop Utilizing Crystalline In-Ga-Zn Oxide Technology

^○Niclas Sjokvist^1,2，Takuro Ohmaru¹，Kazuma Furutani¹，Atsuo Isobe¹，Naoaki Tsutsui¹，Hikaru Tamura¹，Wataru Uesugi¹，Takahiko Ishizu¹，Tatsuya Onuki¹，Kazuaki Ohshima¹，Takanori Matsuzaki¹，Hidetoshi Mimura¹，Atsushi Hirose¹，Yasutaka Suzuki¹，Yoshinori Ieda¹，Tomoaki Atsumi¹，Yutaka Shionoiri¹，Kiyoshi Kato¹，Gensuke Goto¹，Jun Koyama¹，Masahiro Fujita³，Shunpei Yamazaki¹ (SEL¹, Linkoping University²)

キーワード：Oxide Semiconductor,State Retention Flip Flop,Low Power