The 74th JSAP Autumn Meeting,2013

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Oral presentation

15. Crystal Engineering » 15.5 IV-group crystals and IV-IV-group mixed crystals

[18p-B4-1~12] 15.5 IV-group crystals and IV-IV-group mixed crystals

Wed. Sep 18, 2013 1:30 PM - 4:45 PM B4 (TC2 1F-106)

3:30 PM - 3:45 PM

[18p-B4-8] Electrical Properties of Ge1-xSnx Epitaxial Layers Grown on GOI substrates

○Takuma Ohmura1, Takanori Asano1, Masashi Kurosawa1,2, Noriyuki Taoka1, Mitsuo Sakashita1, Osamu Nakatsuka1, Shigeaki Zaima1 (Graduate school of Eng.,Nagoya Univ.1, JSPS Research Fellow (PD)2)

Keywords:GeSn,GOI,電気特性