Poster presentation

[17p-P8-1~7] 15.5 IV-group crystals and IV-IV-group mixed crystals

Tue. Sep 17, 2013 1:30 PM - 3:30 PM P8 (Davis Memorial Auditorium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[17p-P8-1] Effect of annealing of p-DCFET SiGe channel layer on strain

^○Takehiko Sakurazawa¹, Yoshiyuki Suda¹, Takahiro Tsukamoto¹ (Tokyo Univ. of Agric. & Technol.¹)

1:30 PM - 3:30 PM

[17p-P8-2] Solid Phase Epitaxial Growth of Cap-Si/SiGe/Si(110) Heterostructure, and Evaluation of Interface State Density and Mobility of SiO2/ Cap-Si/SiGe/Si(110)

^○Tomoyuki Obata¹, Keisuke Arimoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹, Yusuke Hoshi², Kentaro Sawano², Yasuhiro Shiraki² (CCST Univ. of Yamanashi¹, ARL Tokyo City Univ.²)

1:30 PM - 3:30 PM

△ [17p-P8-3] Detection of Effect of Uniaxial Strain on the Valence Band of SiGe by HXPES with High Spatial Resolution

^○Shunta Yamahori¹, Kentarou Sawano¹, Eiji Ikenaga², Yasuhiro Shiraki¹, Hiroshi Nohira¹ (Tokyo City Univ.¹, Japan Synchrotron Radiation Research Inst.²)

1:30 PM - 3:30 PM

[17p-P8-4] Formation of high quality compressive SiGe layers grown on Si(110) substrates and characterization of electron mobility

^○Kensuke Ido¹, Tomoyuki Obata¹, Keisuke Arimoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹, Kentaro Sawano², Yasuhiro Shiraki² (CCST Univ.¹, ARL Tokyo City Univ²)

1:30 PM - 3:30 PM

[17p-P8-5] Formation and characterization of tensile strained Si/SiGe/Si(110) thin-film structure

^○Shohei Mitsui¹ (CCST Univ. of Yamanashi¹)

1:30 PM - 3:30 PM

△ [17p-P8-6] Fabrication of SiGe Single Crystal Thick Film by Infrared Convergent Heating Furnace

^○(M1C)Masanori Tsuchiya¹, Masanori Nagao¹, Satoshi Watachi¹, Isao Tanaka¹ (Univ. of Yamanashi¹)

1:30 PM - 3:30 PM

[17p-P8-7] The observation of threading edge dislocation related surface step-terrace structures of 4H-SiC(0001) by Scanning Electron Microscopy

^○Tomonori Kajino¹, Yasunori Kutsuma¹, Kouji Ashida¹, Noboru Ohtani¹, Tadaaki Kaneko¹ (Kwangaku Univ.¹)

Oral presentation

[18a-B4-1~10] 15.5 IV-group crystals and IV-IV-group mixed crystals

Wed. Sep 18, 2013 9:15 AM - 12:00 PM B4 (TC2 1F-106)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:15 AM - 9:30 AM

[18a-B4-1] Al-Induced Crystallization of Amorphous-Ge Thin Films Prepared on Various Conducting Layers on Glass Substrates

^○Koki Nakazawa¹, Kaoru Toko¹, Noritaka Usami², Takashi Suemasu¹ (Tsukuba Univ.¹, Nagoya Univ.²)

9:30 AM - 9:45 AM

△ [18a-B4-2] Low-temperature (200˚C) Al-induced crystallization of large-grained Ge (111) thin films on insulating substrates

^○Ryohei Numata¹, Kaoru Toko¹, Naoki Oya¹, Noritaka Usami^{2, 3}, Takashi Suemasu^{1, 3} (Univ. of Tsukuba¹, Nagoya Univ.², JST-CREST³)

9:45 AM - 10:00 AM

[18a-B4-3] Growth Temperature Effects on Crystal Orientation and Grain Size

^○Ryohei Numata¹, Kaoru Toko¹, Noritaka Usami^{2, 3}, Takashi Suemasu^{1, 3} (Univ. of Tsukuba¹, Nagoya Univ.², JST-CREST³)

10:00 AM - 10:15 AM

[18a-B4-4] Self-Organized Zone-Melting Growth by Using a-Ge/Sn/Semiconductor Stacked Structures

^○Yuki Kinoshita¹, Ryo Matsumura¹, Taizoh Sadoh¹, Masanobu Miyao¹ (Kyushu Univ.¹)

10:15 AM - 10:30 AM

[18a-B4-5] Low Temperature SiGe(Sn) Growth in a-GeSn/c-Si Structure by Liquid-Solid Coexisting Annealing

^○Hironori Chikita¹, Ryo Matsumura¹, Yuki Kinoshita¹, Yuki Kai¹, Taizoh Sadoh¹, Masanobu Miyao¹ (Dept. Electronics, Kyushu Univ.¹)

10:30 AM - 10:45 AM

[18a-B4-6] Formation of Large Grain Ge(Sn) on Insulator by Liquid-Solid Coexisting Annealing of a-GeSn/Insulator Structure

^○Yuki Kai¹, Hironori Chikita¹, Ryo Matumura¹, Taizo Sado¹, Masanobu Miyao¹ (Dept. Electronics, Kyushu Univ.¹)

Break （10:45 AM - 11:00 AM）

11:00 AM - 11:15 AM

△ [18a-B4-7] Photoluminescence in Ge-on-insulator structures fabricated by lateral liquid-phase epitaxy

^○Masahiro Matsue¹, Yuhsuke Yasutake², Susumu Fukatsu², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka Univ.¹, Univ. of Tokyo²)

11:15 AM - 11:30 AM

△ [18a-B4-8] Electrical properties for strained GOI formed by layer transfer method

^○Tomonori Nagashima¹, Hironori Katsumata¹, Saeki Endo¹, Shinya Yamada², Kouhei Hamaya², Masanobu Miyao², Yasuhiro Siraki¹, Kentaro Sawano¹ (Tokyo City Univ.¹, Kyushu Univ.²)

11:30 AM - 11:45 AM

[18a-B4-9] Studies on crystalline defect formation processes in compressively strained-Si/Si_1-XC_X/Si(100) heterostructures

^○(M2)Shoichiro Sakai¹, Hiroshi Furukawa¹, Keisuke Arimoto¹, Zyunnzi Yamanaka¹, Kiyokazu Nakagawa¹, Noritaka Usami², Yusuke Hoshi², Kenntaro Sawano³, Yasuhiro Siraki³ (CCST of Univ. of Yamanashi¹, Nagoya Univ.², ARL Tokyo City Univ.³)

11:45 AM - 12:00 PM

[18a-B4-10] Formation of uniaxially strained SiGe with high Ge concentrations by selective ion implantation

^○Eisuke Yonekura¹, Yutaro Shoji¹, Kiyokazu Nakagawa², Yasuhiro Shiraki¹, Kentarou Sawano¹ (Tokyo City Univ.¹, Yamanashi Univ.²)

Oral presentation

[18p-B4-1~12] 15.5 IV-group crystals and IV-IV-group mixed crystals

Wed. Sep 18, 2013 1:30 PM - 4:45 PM B4 (TC2 1F-106)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch （12:00 PM - 1:30 PM）

1:30 PM - 1:45 PM

△ [18p-B4-1] Temperature dependence of growth rate on (311) facet in Ge selective growth with CVD

^○Yasutaka Mizuno¹, Naoyuki Kawai¹, Kazumi Wada¹ (Univ. of Tokyo¹)

1:45 PM - 2:00 PM

[18p-B4-2] Crystallinity evaluation of Ge crystal for optical waveguides by highly parallel synchrotron X-ray microbeam

^○Takahiro Onoue¹, Kazuki Hazama¹, Shuhei Fukuda¹, Yoshiyuki Tsusaka^1,2, Hidekazu Takano^1,2, Yasushi Kagoshima^1,2, Yasutaka Mizuno³, Yasuhiko Ishikawa³, Kazumi Wada³, Junji Matsui² (Univ. of Hyogo¹, Univ. of Hyogo², Tokyo Univ.³)

2:00 PM - 2:15 PM

[18p-B4-3] RBS measurement of Ge directly grown on Si substrate(II)

^○Kenichiro Kono¹, Sungbong Park², Yasuhiko Ishikawa², Kazumi Wada² (NIMS, Quantum Beam U.¹, Univ. of Tokyo, Mat. Eng.²)

2:15 PM - 2:30 PM

[18p-B4-4] Low temperature crystallization of amorphous SiGe layer by Sn incorporation

^○Takashi Yamaha¹, Takamitsu Arahira¹, Masashi Kurosawa^1,2, Noriyuki Taoka¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya University¹, SPS²)

2:30 PM - 2:45 PM

[18p-B4-5] Supersaturation controlled crystallization of large-grain poly-Si_1-xSn_x on insulator

^○Masashi Kurosawa^1,2, Takamitsu Arahira¹, Takashi Yamaha¹, Noriyuki Taoka¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya Univ.¹, JSPS²)

2:45 PM - 3:00 PM

[18p-B4-6] Characterization of Ge_1-x-ySn_xC_y Layers Formed by useing Sputtering Deposition

^○Kengo Terasawa¹, Tomonori Harada¹, Takashi Yamaha¹, Osamu Nakatsuka¹, Noriyuki Taoka¹, Shigeaki Zaima¹ (Graduate School of Eng., Nagoya Univ.¹)

Break （3:00 PM - 3:15 PM）

3:15 PM - 3:30 PM

[18p-B4-7] Optical Properties of High Sn Content Ge_1-xSn_x Epitaxial Layers

^○Koya Hozaki¹, Takeshi Koyama¹, Masashi Kurosawa^1,2, Noriyuki Taoka¹, Osamu Nakatsuka¹, Hideo Kishida¹, Shigeaki Zaima¹ (Graduate School of Eng., Nagoya Univ.¹, JSPS Research Fellow (PD)²)

3:30 PM - 3:45 PM

[18p-B4-8] Electrical Properties of Ge_1-xSn_x Epitaxial Layers Grown on GOI substrates

^○Takuma Ohmura¹, Takanori Asano¹, Masashi Kurosawa^1,2, Noriyuki Taoka¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Graduate school of Eng.,Nagoya Univ.¹, JSPS Research Fellow (PD)²)

3:45 PM - 4:00 PM

[18p-B4-9] Characterization of anisotropic strain Ge-rich SGOI nanowire formed by two-step Ge-condensation technique with high-NA and oil-immersion Raman spectroscopy

^○Koji Usuda¹, Keiji Ikeda¹, Daisuke Kosemura², Motohiro Tomita², Atsushi Ogura², Tsutomu Tezuka¹ (AIST-GNC¹, Meiji Univ.²)

4:00 PM - 4:15 PM

△ [18p-B4-10] Deposition of crystalline Ge nanoparticle films by RF sputtering method

^○(M1)Daiki Ichida¹, Giichiro Uchida¹, Hyunwoong Seo¹, Kunihiro Kamataki³, Naho Itagaki^1,2, Kazunori Koga¹, Masaharu Shiratani¹ (Kyushu Univ.¹, PRESTO², Faculty of Arts and Science, Kyushu Univ.³)

4:15 PM - 4:30 PM

[18p-B4-11] EXAFS study on Mn doping into Si: detection of silicide formation

^○Kazushi Miki^1,2, Koichi Murata^1,2, Kiyofumi Nitta³, Tomoya Uruga³, Yasuko Terada³, Ko'ichi Nittoh¹, Osami Sakata¹ (NIMS¹, Univ. of Tsukuba², JASRI³)

4:30 PM - 4:45 PM

▲ [18p-B4-12] Segregation of Ge in B and Ge codoped Czochralski-Si crystal growth

^○Arivanandhan Mukannan¹, Raira Gotoh², Kozo Fujiwara², Satoshi Uda², Yuko Inatomi³, Yasuhiro Hayakawa¹, Makoto Konagai⁴ (RIE Shizuoka Univ¹, IMR Tohoku Univ.², JAXA³, Tokyo Insti.Tech.⁴)

Sessions

15. Crystal Engineering » 15.5 IV-group crystals and IV-IV-group mixed crystals

[17p-P8-1~7] 15.5 IV-group crystals and IV-IV-group mixed crystals

[17p-P8-1] Effect of annealing of p-DCFET SiGe channel layer on strain

[17p-P8-2] Solid Phase Epitaxial Growth of Cap-Si/SiGe/Si(110) Heterostructure, and Evaluation of Interface State Density and Mobility of SiO2/ Cap-Si/SiGe/Si(110)

△ [17p-P8-3] Detection of Effect of Uniaxial Strain on the Valence Band of SiGe by HXPES with High Spatial Resolution

[17p-P8-4] Formation of high quality compressive SiGe layers grown on Si(110) substrates and characterization of electron mobility

[17p-P8-5] Formation and characterization of tensile strained Si/SiGe/Si(110) thin-film structure

△ [17p-P8-6] Fabrication of SiGe Single Crystal Thick Film by Infrared Convergent Heating Furnace

[17p-P8-7] The observation of threading edge dislocation related surface step-terrace structures of 4H-SiC(0001) by Scanning Electron Microscopy

[18a-B4-1~10] 15.5 IV-group crystals and IV-IV-group mixed crystals

[18a-B4-1] Al-Induced Crystallization of Amorphous-Ge Thin Films Prepared on Various Conducting Layers on Glass Substrates

△ [18a-B4-2] Low-temperature (200˚C) Al-induced crystallization of large-grained Ge (111) thin films on insulating substrates

[18a-B4-3] Growth Temperature Effects on Crystal Orientation and Grain Size

[18a-B4-4] Self-Organized Zone-Melting Growth by Using a-Ge/Sn/Semiconductor Stacked Structures

[18a-B4-5] Low Temperature SiGe(Sn) Growth in a-GeSn/c-Si Structure by Liquid-Solid Coexisting Annealing

[18a-B4-6] Formation of Large Grain Ge(Sn) on Insulator by Liquid-Solid Coexisting Annealing of a-GeSn/Insulator Structure

△ [18a-B4-7] Photoluminescence in Ge-on-insulator structures fabricated by lateral liquid-phase epitaxy

△ [18a-B4-8] Electrical properties for strained GOI formed by layer transfer method

[18a-B4-9] Studies on crystalline defect formation processes in compressively strained-Si/Si_1-XC_X/Si(100) heterostructures

[18a-B4-10] Formation of uniaxially strained SiGe with high Ge concentrations by selective ion implantation

[18p-B4-1~12] 15.5 IV-group crystals and IV-IV-group mixed crystals

△ [18p-B4-1] Temperature dependence of growth rate on (311) facet in Ge selective growth with CVD

[18p-B4-2] Crystallinity evaluation of Ge crystal for optical waveguides by highly parallel synchrotron X-ray microbeam

[18p-B4-3] RBS measurement of Ge directly grown on Si substrate(II)

[18p-B4-4] Low temperature crystallization of amorphous SiGe layer by Sn incorporation

[18p-B4-5] Supersaturation controlled crystallization of large-grain poly-Si_1-xSn_x on insulator

[18p-B4-6] Characterization of Ge_1-x-ySn_xC_y Layers Formed by useing Sputtering Deposition

[18p-B4-7] Optical Properties of High Sn Content Ge_1-xSn_x Epitaxial Layers

[18p-B4-8] Electrical Properties of Ge_1-xSn_x Epitaxial Layers Grown on GOI substrates

[18p-B4-9] Characterization of anisotropic strain Ge-rich SGOI nanowire formed by two-step Ge-condensation technique with high-NA and oil-immersion Raman spectroscopy

△ [18p-B4-10] Deposition of crystalline Ge nanoparticle films by RF sputtering method

[18p-B4-11] EXAFS study on Mn doping into Si: detection of silicide formation

▲ [18p-B4-12] Segregation of Ge in B and Ge codoped Czochralski-Si crystal growth