The 74th JSAP Autumn Meeting,2013

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Oral presentation

13. Semiconductors A (Silicon) » 13.2 Semiconductor surfaces

[18p-C1-1~13] 13.2 Semiconductor surfaces

Wed. Sep 18, 2013 1:00 PM - 4:30 PM C1 (TC3 1F-101)

3:30 PM - 3:45 PM

△ [18p-C1-10] Dry Etching of Si by Using Pd Catalyst and Formation of Through Holes

○(M1)Ryoma Kawaguchi1, Takashi Harada1, Shigeru Ikeda1, Michio Matsumura1 (Research center for solar energy chemisty, Osaka univ.,1)

Keywords:シリコンエッチング,貫通孔