The 74th JSAP Autumn Meeting,2013

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Oral presentation

13. Semiconductors A (Silicon) » 13.2 Semiconductor surfaces

[18p-C1-1~13] 13.2 Semiconductor surfaces

Wed. Sep 18, 2013 1:00 PM - 4:30 PM C1 (TC3 1F-101)

3:45 PM - 4:00 PM

[18p-C1-11] Etching Rate Model of Silicon Dioxide Film Using Single Wafer Wet Etcher

○Kosuke Mizuno1, Shintaro Ohashi1, Hitoshi Habuka1, Tetsuo Kinoshita2 (Yokohama Nat. Univ.1, Pre-Tech2)

Keywords:エッチング反応