The 74th JSAP Autumn Meeting,2013

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Oral presentation

13. Semiconductors A (Silicon) » 13.2 Semiconductor surfaces

[18p-C1-1~13] 13.2 Semiconductor surfaces

Wed. Sep 18, 2013 1:00 PM - 4:30 PM C1 (TC3 1F-101)

2:15 PM - 2:30 PM

▲ [18p-C1-6] Investigation of Si(110) surface roughness on MOS capacitor with ultrathin HfON gate insulator formed by ECR plasma sputtering

○Dae-Hee Han1, Shun-ichiro Ohmi1 (Tokyo Tech1)

Keywords:surface roughness