[18p-D1-1~17] 6.2 Carbon-based thin films

△ [18p-D1-4] High temperature operation of hydrogen-terminated diamond MOSFETs with Al₂O₃ passivation

^○Dechen Xu¹, Hidetoshi Tsuboi¹, Tomoya Naruo¹, Tetsuya Yamada¹, Akira Daicho¹, Tatsuya Saito¹, Kazuhiro Kuruma¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda University¹)

Keywords:MOSFET,Al2O3,ダイヤモンド